Bidirectional and symmetrical high-speed overvoltage protective device

Abstract

The invention provides a semiconductor integrated overvoltage protective device. The integrated overvoltage protective device comprises an NPN transistor, an NPNP thyristor combination, a PNP transistor and a PNPN thyristor combination, wherein the NPNP thyristor combination is controlled by the NPN transistor, the PNPN thyristor combination is controlled by the PNP transistor, the base electrode of the NPN transistor serves as a negative overvoltage reference electric potential port G- of the device, the base electrode of the PNP transistor serves as a positive overvoltage reference electric potential port G+ of the device, the anode of an NPNP thyristor is connected with the cathode of the PNPN thyristor to serve as a grounding port A of the device, and the cathode of the NPNP thyristor is connected with the anode of the PNPN thyristor to serve as an access port K of the device. The semiconductor integrated overvoltage protective device has the advantages that the positive overvoltage protective capacity and the negative overvoltage protective capacity are even, the current discharging speed is high, and the device is bidirectional and symmetrical.

Description

technical field [0001] The invention relates to a semiconductor overvoltage protection device, which is mainly used to effectively protect the voice processing chip of a program-controlled exchange when it is subjected to overvoltage impacts such as lightning strikes and voltage fluctuations. Background technique [0002] With the increasingly large and complex telephone communication network, effectively preventing damage to communication equipment caused by lightning strikes, power supply voltage fluctuations, and electromagnetic induction has always been an important problem that technicians in this field need to solve. In 1998, my country promulgated the technical requirements for lightning protection of telecommunications terminal equipment in the communication industry. Anti-surge protection devices have experienced a leapfrog development from gas discharge tubes to semiconductor overvoltage protection devices. [0003] Semiconductor overvoltage protection devices have...

AI Technical Summary

Problems solved by technology

[0006] In order to achieve this goal, the technical solution adopted by the present invention is: in view of the structural defects of the current mainstream semiconductor overvoltage protection device, such as the overvoltage protection device of the model TisP61089B available in the market, replace the positive overvoltage protection with a thyristor. Diode, so as to form a combination of NPN transistor and NPNP thyristor controlled by it for negative overvoltage protection, and a combination of PNP transistor and PNPN thyristor controlled by it for positive overvoltage protection. The combination of the two forms a Both positive and negative overvoltage protection are realized by transistors and thyristors, which effectively overcomes the defect that the diode’s current discharge capacity and discharge speed are weaker than those of thyristors, and realizes positive and negative overvoltage protection of overvoltage protection devices. The goal of symmetrical and balanced capacity can effectively improve the overall discharge capacity and discharge speed of the device, so that the anti-breakdown voltage, such as its anti-lightning voltage capability, can reach 4500V, and the discharge speed can adapt to the rising edge / falling edge of 8 / 20 micro second fast waveform

Images