Metal-halide-doped organic hole transporting layer, and preparation method and application thereof

A metal halide, hole transport layer technology, applied in photosensitive equipment, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of insufficient long-term stability, low solubility, high cost, etc., and achieve good application prospects, Simple preparation method, wide application effect

Active Publication Date: 2013-08-07
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such dopants usually have low solubility in organic solvents or require high-cost vacuum deposition techniques, and they have insufficient long-term stability, which limits the use of P-type doped layers in organic hole transport layers. Applications

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Dissolve a certain amount (such as 90mg) of spiro-OMeTAD in chlorobenzene (such as 0.5mL) to obtain an organic hole transport material solution (solution A), and a certain amount of tin tetrachloride (such as 10g) is dissolved in an acetonitrile solution (such as 1mL) A metal halide dopant solution (solution B) was obtained from the solution (solution B), and a certain amount of solution B was added to A, and ultrasonically mixed to make it fully mixed, and finally the mixed solution was spin-coated on the substrate, and heated and dried at a certain temperature, that is A hole transport layer is obtained.

[0023] A solid-state dye-sensitized solar cell was assembled using the hole-transporting layer, with an intensity of 100mWcm -2 The photoelectric performance test of the simulated solar light source shows that the short-circuit current density of the solar cell J sc =7.52mA / cm 2 , open circuit voltage V oc =876mV, fill factor FF=0.47, photoelectric conversion eff...

Embodiment 2

[0026] Dissolve a certain amount (such as 90mg) of spiro-OMeTAD in chlorobenzene (such as 0.5mL) to obtain an organic hole transport material solution (solution A), and a certain amount of tin tetrachloride (such as 10g) is dissolved in an acetonitrile solution (such as 1mL) To obtain a metal halide dopant solution (solution B), take a certain amount of solution B and add it to A, and mix it thoroughly with ultrasound to obtain a hole transport material solution. Finally, the mixed solution is spin-coated on the substrate, and in a certain heating and drying at a lower temperature to obtain a hole transport layer.

[0027] A solid-state dye-sensitized solar cell was assembled using the hole-transporting layer, with an intensity of 100mWcm -2 The photoelectric performance test of the simulated solar light source shows that the short-circuit current density of the solar cell J sc =7.05mA / cm 2 , open circuit voltage V oc =858mV, fill factor FF=0.50, photoelectric conversion ef...

Embodiment 3

[0030] A certain amount (such as 30mg) of P3HT was dissolved in chlorobenzene (such as 1mL) to obtain an organic hole transport material solution (solution A), and a certain amount of tin tetrachloride (such as 10g) was dissolved in an acetonitrile solution (such as 1mL) to obtain a metal Halide dopant solution (solution B), take a certain amount of solution B and add it to A, ultrasonically mix it thoroughly to obtain a hole transport material solution, and finally spin-coat the mixed solution on the substrate and heat it at a certain temperature drying to obtain the hole transport layer.

[0031] A solid-state dye-sensitized solar cell was assembled using the hole-transporting layer, with an intensity of 100mWcm -2 The photoelectric performance test of the simulated solar light source shows that the short-circuit current density of the solar cell J sc =3.46mA / cm 2 , open circuit voltage V oc =730mV, fill factor FF=0.63, photoelectric conversion efficiency η=1.59%.

[003...

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PUM

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Abstract

The invention relates to a preparation method of a metal-halide-doped organic hole transporting layer. The preparation method includes: mixing organic hole transporting material and organic solvent to prepare organic hole transporting material solution; mixing metal halide and organic solvent to prepare metal halide dopant solution; mixing the organic hole transporting material solution and the metal halide dopant solution to form mixed solution; and spin-coating a substrate with the mixed solution, and heating and drying to obtain the hole transporting layer. The invention further discloses the organic hole transporting layer prepared by the method, and a solar cell with the organic hole transporting layer. The preparation method is simple. The number of carriers of the prepared organic hole transporting layer is increased, hole mobility and conductivity of the hole transporting layer are increased evidently, energy band position of the hole transporting layer is changed, the hole transporting layer has better photoelectric property, and the hole transporting layer is well applicable to the devices such as dye-sensitized solar cells, organic solar cells, and organic-inorganic hybrid solar cells.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a method for preparing an organic hole transport layer, the organic hole transport layer prepared by the method, and its application in all-solid-state dye-sensitized solar cells. Background technique [0002] Organic hole semiconductor materials have become more and more popular due to their unique properties, and have been widely used in organic light-emitting diodes, dye-sensitized solar cells, organic solar cells, field-effect transistors and other fields. This material can be prepared into thin films by solution method, the process is simple, and the price is low, showing great potential in the future electronic market. Doping this material to adjust its photoelectric performance can further improve its application range, which is the mainstream direction of future research and application. [0003] The existing organic hole transport layer is ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/44H01G9/20
CPCY02E10/542Y02E10/549
Inventor 韩宏伟徐觅李雄刘广辉汪恒荣耀光库治良刘林峰
Owner HUAZHONG UNIV OF SCI & TECH
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