Transverse power component with high K insulating regions

A technology of lateral power devices and insulating regions, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effects of improving breakdown voltage, optimizing surface electric field, and low cost

Active Publication Date: 2013-07-24
NANJING UNIV OF POSTS & TELECOMM INST AT NANJING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The application of this structure in lateral power devices has not been reported

Method used

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  • Transverse power component with high K insulating regions
  • Transverse power component with high K insulating regions
  • Transverse power component with high K insulating regions

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Embodiment Construction

[0029] Figure 5 It is a three-dimensional view of one of the lateral power devices with a high-K insulating region provided by the present invention, and its process flow. As can be seen from the figure, it is to etch trenches with corresponding patterns on the epitaxial layer 2, and then fill the trenches with an insulating material with a high dielectric constant, thereby forming alternately arranged N-type semiconductor regions 3 and high K insulator region 4. Next, a semiconductor body region 6, a semiconductor drain region 5, a semiconductor source region 8 and a semiconductor body contact region 7 in the semiconductor body region, a gate oxide layer 9, a gate metal 10, and a source metal are formed in the epitaxial layer using a conventional LDMOS process. 11, Drain metal 12.

[0030] In the design process, according to the specific situation, certain flexible designs can be carried out under the condition that the basic structure remains unchanged, for example:

[0...

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Abstract

The invention provides a transverse power component with high K insulating regions. An insulating column region with a high dielectric constant is led to the inside of a drift region of the power component. The high K insulating regions and N-type column regions are distributed in an alternate mode. The insulating column region extends into a semi-conductor region. The insulating column region with the high dielectric constant has a field-reduction function. Surface electric field distribution of the drift region and optimal drift region concentration can be optimized through increase of the dielectric constant of the insulating column region, and accordingly voltage endurance and conductive performance of the component are improved. A transverse diffusion field effect transistor LDMOS or a transverse PN diode or a transverse insulated gate bipolar transistor LIGBT made according to the structure has the advantages of being high in breakdown voltage, low in on resistance, simple in process, low in cost and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and particularly relates to lateral power devices for high-power and high-voltage applications, such as lateral diffusion field effect transistors LDMOS, lateral PN diodes, lateral insulated gate bipolar transistors LIGBT, and the like. Background technique [0002] As we all know, in the design of lateral high-voltage power devices, factors such as breakdown voltage, on-resistance, device size, and manufacturing cost must be considered comprehensively. Usually, the improvement of performance on the one hand often leads to the reduction of performance on the other hand, especially when the breakdown voltage is increased, the on-resistance often increases at the same time. Therefore, how to obtain the compromise between the breakdown voltage and the on-resistance has always been a hot topic of research by experts and scholars. [0003] The basic structure of SOI lateral powe...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 郭宇锋姚佳飞
Owner NANJING UNIV OF POSTS & TELECOMM INST AT NANJING CO LTD
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