Ultraviolet selective silicon avalanche photoelectric detection chip

Abstract

The invention provides an ultraviolet selective silicon avalanche photoelectric detection chip. A P+ light absorption layer (4) with the thickness of smaller than 200nm is connected with an N-type layer (3), An N+ ohmic contact layer (5) is symmetrical to the P+ light absorption layer (4), high-doping deep-diffusion regions penetrating through a whole N-type epitaxial layer (2) are arranged on two sides of the N+ ohmic contact layer (5) so as to enable the whole chip outside an avalanche region to be located in a P+ deep diffusion region (6) with the same potential as the chip, the P+ deep diffusion region (6) is connected with the N+ ohmic contact layer (5) through a silicon nitride passivation layer (9) arranged on an upper-end plane of the N-type epitaxial layer (2), a chip positive pole (7) and a chip negative pole (8). The ultraviolet selective silicon avalanche photoelectric detection chip avoids composition of a photon-generated carrier on the surface through the ultra-thin light absorption layer, produces the collision ionization effect under the acceleration effect of an electric field and achieves avalanche multiplication of the photon-generated carrier. The high-doping deep-diffusion regions penetrate through the whole epitaxial layer, so that the selective detection of an ultraviolet band is achieved.

Description

technical field [0001] The invention belongs to the field of ultraviolet imaging technology and relates to a chip structure of an ultraviolet selective silicon avalanche photodetector. Background technique [0002] UV photodetector is the core key component of UV detection technology such as UV alarm. The ultraviolet warning is to use the ultraviolet band of the "solar spectral blind zone" to detect the flame and tail flame of the missile. Since the UV warning system avoids the complex background caused by the sun, the most powerful natural light source, the "solar spectral blind" UV warning provides an extremely effective means of approach warning. At present, ultraviolet warning equipment has developed into one of the largest approach warning systems equipped. The development of high-sensitivity and low-noise ultraviolet detection devices is an important basic work for ultraviolet warning equipment. [0003] For silicon materials, the absorption coefficient α in the ult...

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Problems solved by technology

The above devices are basically compound semiconductor ultraviolet detectors. Due to the difficulty in manufacturing substrate materials and the special chip manufacturing process, it is difficult to achieve mass production and the cost is high.

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