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Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers

A technology of vertical airflow and gas mixing chamber, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., to improve the migration rate and eliminate the effect of pre-reaction

Inactive Publication Date: 2013-07-17
南昌硅基半导体科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when growing III-V nitride semiconductor materials with high aluminum components for the preparation of ultraviolet devices, the aforementioned two MOCVD (Axitron and Veeco) reaction tubes are not suitable, and it is difficult to obtain high-quality AlN or AlGaN materials , the main reason is the strong pre-reaction between the Al source and NH3 and the difficulty of migration on the surface of the epitaxial layer after Al atoms bond with N atoms

Method used

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  • Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers
  • Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers
  • Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers

Examples

Experimental program
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Effect test

Embodiment 1

[0034] Example 1: Two mixing chambers

[0035] A multi-chamber vertical airflow MOCVD nozzle device, comprising: a cylindrical closed shell 7 formed by a top plate 2, a side wall 1 and a bottom plate 4, and the closed shell 7 is connected with the MOCVD reaction chamber 13 below as a whole , the inside of the closed housing 7 is divided into two independent and mutually sealed sealed chambers 5 and water-cooled chambers 9 by the middle plate 3, the sealed chamber 5 is located above the middle plate 3, located below the middle plate 3, and is connected to the MOCVD reaction chamber 13 Adjacent is the water-cooling chamber 9, on the side walls corresponding to the two ends of the water-cooling chamber 9, a cooling water inlet pipe 12 and a cooling water outlet pipe 11 are respectively installed, and the sealed chamber 5 is divided into two independent volumes by a vertical separator 6 The same and fan-shaped gas mixing chambers C1 and C2 are respectively equipped with a gas mixi...

Embodiment 2

[0040] The structure of embodiment 2 is basically the same as that of embodiment 1, the difference is:

[0041] The isolation body 6 is a hollow isolation cavity type, and an air intake duct 19 is installed on the side wall 1 of the isolation cavity 18 , and air intake pores 8 are distributed on the middle plate 3 connecting with the isolation cavity 18 .

[0042] The carrier gas of the MO source can be fed into the isolation chamber 18 , and the same as the reaction gas in the gas mixing chamber, the carrier gas will enter the MOCVD reaction chamber 13 through the inlet pores 8 . After the carrier gas is passed into the MOCVD reaction chamber 13, the reaction gas injected from the gas mixing chamber I region C1 and the reaction gas injected from the II region C2 will be separated by the carrier gas injected from the isolation 18, thereby slowing down Diffusion between the above reacting gases.

Embodiment 3

[0044] The structure of embodiment 3 is basically the same as that of embodiment 1, the difference is:

[0045] The separator 5 divides the sealed chamber 5 into four zones: C1, C2, C3 and C4.

[0046] When the pre-reaction products of the two types of reaction gases are solid (such as growing P-type GaN) or their pre-reaction is not conducive to material growth (such as growing nitrides with high aluminum components), the adjacent gas mixing chambers are filled with different types of gas. reaction gas, the substrate 14 rotates through the two gas mixing chambers, which means that the substrate 14 has continuously passed through the gas flow regions of the two types of reaction gases; the more the number of gas mixing chambers, the smaller the angle of rotation required, The shorter the required time (the rotation speed of the substrate is constant), the more uniform ion concentration can be obtained above the substrate 14 in a shorter time, which can improve the uniformity o...

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Abstract

The invention discloses a vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers. The vertical airflow type MOCVD spray head device comprises a cylindrical closed shell consisting of a top plate, side walls and a bottom plate, wherein the interior of the closed housing is divided into a sealed cavity and a water-cooling cavity by a middle-layer plate; and a cooling water inlet tube and a cooling water outlet tube are arranged on the side walls corresponding to the two ends of the water-cooling cavity, respectively. The vertical airflow type MOCVD spray head device with the multiple gas mixing chambers is characterized in that the sealed cavity is divided into two or more independent and fan-shaped gas mixing chambers by a vertical isolating body; a gas mixing chamber gas inlet pipeline is formed on the side walls or the top plate corresponding to each gas mixing chamber, respectively; and a gas inlet fine hole is communicated with each gas mixing chamber and the MOCVD reaction chamber. The vertical airflow type MOCVD spray head device with the multiple gas mixing chambers can be used for sufficiently mixing two reaction gases before the two reaction gases selectively enter the reaction chamber or can be used for entering the two reaction gases in the reaction chamber in a mutually independent manner, so that the normal transportation of the gases can be ensured, and each single layer can be grown in the most-suitable gas mixing status while a multi-layer structure film material can be grown. The vertical airflow type MOCVD spray head device with the multiple gas mixing chambers is especially beneficial to manufacturing of III-V-family nitride semiconductor materials of high-aluminum components of an ultraviolet apparatus.

Description

technical field [0001] The invention relates to metal organic compound chemical vapor deposition equipment (MOCVD) for semiconductor material growth, in particular to a multi-gas mixing chamber vertical airflow type MOCVD nozzle device. Background technique: [0002] Metal Organic Chemical Vapor Deposition (MOCVD) equipment is a vapor deposition equipment that uses metal organic compounds as the source material, mainly for the growth of III-V gallium nitride, gallium arsenide and II-VI For compound semiconductor materials such as zinc oxide, very steep material interfaces can be obtained by MOCVD, which has obvious advantages in the preparation of superlattices and quantum wells. Currently, MOCVD has been widely used in semiconductor optoelectronic industries such as LEDs. [0003] The source materials of MOCVD can usually be divided into two categories: one is group III or group II; These two types of gases are easy to react with each other after mixing, and some of the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
Inventor 江风益刘军林蒲勇张建立
Owner 南昌硅基半导体科技有限公司
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