Method for forming fin portion of fin field effect tube and fin field effect tube

Abstract

The invention provides a method for forming a fin portion of a fin field effect tube and the fin field effect tube. The method for forming the fin portion of the fin field effect tube includes the steps: providing a semi-conductor substrate, forming a silicon oxide layer on the surface of the semi-conductor substrate, and forming a hard mask layer on the surface of the silicon oxide layer; etching the silicon oxide layer and the hard mask layer, forming a fin portion groove and exposing the semi-conductor substrate; filling the fin portion groove with a polycrystal material or an amorphous semi-conductor material; forming the fin portion in the fin portion groove with the polycrystal material or the amorphous semi-conductor material through an epitaxial growth method; conducting smoothening with the surface of the hard mask layer as a termination position; and removing the hard mask layer and exposing the silicon oxide layer. Crystal lattice damage on the surface of the formed fin portion is reduced, the fin portion and the inside of the silicon oxide layer are compact and free of gaps, the height of the fin portion is controllable, the performance and reliability of the fin field effect tube are improved, and forming process of small semi-conductor devices is precise.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a fin of a fin field effect transistor and a method for forming a fin field effect transistor. Background technique [0002] With the continuous development of semiconductor process technology and the gradual reduction of process nodes, gate-last (gate-last) process has been widely used to obtain an ideal threshold voltage and improve device performance. However, when the feature size (CD, Critical Dimension) of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance, and the multi-gate device has been obtained as a substitute for the conventional device. Widespread concern. [0003] Fin Field Effect Transistor (Fin FET) is a common multi-gate device, such as figure 1 Shown is a three-dimensional structure of a fin...

AI Technical Summary

Problems solved by technology

[0004] However, the fin field effect transistor formed by the existing technology has a large fin feature size, and the fin field effect transistor is easy to form parasitic capacitance or generate leakage current, which has poor performance and stability

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