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A kind of preparation method of quasi-monocrystalline silicon solar cell

A technology of solar cells and quasi-single crystal silicon, which is applied in the field of solar cells, can solve the problems of low efficiency of solar cells, achieve the effect of broadening the market of quasi-single crystal cells, solving optimization, and uniform appearance

Active Publication Date: 2015-11-11
CHINT NEW ENERGY TECH (HAINING) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem of low efficiency of solar cells obtained after quasi-monocrystalline silicon is textured in the prior art, the invention provides a method for preparing quasi-monocrystalline silicon solar cells

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  • A kind of preparation method of quasi-monocrystalline silicon solar cell
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  • A kind of preparation method of quasi-monocrystalline silicon solar cell

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Embodiment Construction

[0029] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. It should be noted that components illustrated in the figures are not necessarily drawn to scale. Descriptions of well-known components and processing techniques and processes are omitted herein to avoid unnecessarily limiting the present invention.

[0030] refer to figure 1 , figure 1 Shown is a schematic flow chart of a specific embodiment of a method for preparing a quasi-monocrystalline silicon solar cell according to the present inve...

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Abstract

The invention discloses a preparation method for a pseudo-single crystal silicon solar cell. The preparation method includes the steps: classifying pseudo-single crystal silicon slices; selecting wool making methods according to different classifications and making wool on the front surfaces of the pseudo-single crystal silicon slices; forming P diffusion layers on the front surfaces of the silicon slices and then removing PSG (phosphorus silicon glass) on the front surfaces of the silicon slices and peripheral P diffusion layers; forming anti-reflection coatings on the front surfaces of the silicon slices; forming back electrodes and aluminum back surface fields on the back surfaces of the silicon slices; and forming positive electrodes on the front surfaces of the silicon slices. The pseudo-single crystal silicon slices are more particularly classified, and then proper wool making processes are selected according to different classifications of the pseudo-single crystal silicon slices to obtain the solar cell which is uniform in appearance, narrow in efficiency distribution and high in photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a quasi-single crystal silicon solar cell. Background technique [0002] Quasi-single crystal silicon is a product similar to single crystal silicon or even full single crystal silicon produced by polycrystalline silicon ingot technology. Quasi-single crystal silicon combines the advantages of single crystal silicon and polycrystalline silicon, and has the characteristics of less grain boundaries, low dislocation density, large output, and high efficiency. At present, the preparation technology of quasi-monocrystalline silicon wafers is relatively mature, and its application in solar cells has become a focus of attention of major research institutions and manufacturers, and some enterprises have begun mass production of quasi-monocrystalline silicon cells. [0003] Although the proportion of single crystal silicon in quasi-single crystal silicon is rel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/521Y02P70/50
Inventor 石强韩玮智牛新伟蒋前哨李永辉仇展炜
Owner CHINT NEW ENERGY TECH (HAINING) CO LTD
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