Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultralow-friction silicon-aluminum double-element mixed amorphous carbon film preparing method

A binary doping, ultra-low friction technology, applied in ion implantation plating, gaseous chemical plating, coating, etc., to achieve good wear resistance, good elasticity, and reduce the friction coefficient

Active Publication Date: 2013-06-19
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, thin film materials with ultra-low coefficient of friction have significant application prospects in microelectromechanical systems (MEMS) and bearings, but the realization of ultra-low coefficient of friction is still very challenging, and it can continue to appear for a long time Thin film materials with ultra-low coefficient of friction are even more lackluster

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Clean the substrate: First, ultrasonically clean the monocrystalline silicon wafer (N100 type silicon wafer) with absolute ethanol and acetone solution for 10 minutes respectively, dry it with nitrogen and place it in the reaction chamber of the magnetron sputtering deposition system; vacuumize: use high-efficiency The molecular pump evacuates the reaction chamber; substrate surface treatment: when the vacuum degree is higher than 5×10 -4 Pa, pass argon gas in the deposition chamber, and use argon (Ar) plasma to sputter and clean the single crystal silicon wafer for about 10 -20min, to remove the oxide layer and other impurities on the surface; Deposition: Methane gas and argon gas are mixed in the ratio of 1:7 and then passed into the reaction chamber, and the working pressure is opened under the condition of 0.5-1.2Pa RF power supply (power 400-700W), jointly sputtering a mixed target composed of aluminum and silicon (the area ratio is A 铝 / A 硅 =1 / 8), and at the sam...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
hardnessaaaaaaaaaa
diameteraaaaaaaaaa
friction coefficientaaaaaaaaaa
Login to View More

Abstract

The invention discloses a silicon-aluminum double-element mixed amorphous carbon film preparing method with a radio frequency magnetron sputtering physical vapor deposition technology. An ultralow-friction silicon-aluminum double-element mixed amorphous carbon film has nano hardness of 9-15 Gpa and good tribology performance, the minimum friction coefficient can reach 0.0083, and the number of reciprocating times continuously in the ultralow friction coefficient can be 18000. The film is even and compact and is firmly combined with base materials, abrasion resistance is good, the film can be widely used in a magnetic memory optical disk, a micro electronic mechanical system (MEMS) and automobile parts and other fields.

Description

technical field [0001] The invention relates to a method for preparing a silicon-aluminum binary doped amorphous carbon film with excellent tribological properties by using radio frequency magnetron sputtering physical vapor deposition technology. Background technique [0002] Due to its high hardness, extremely low friction coefficient, excellent wear resistance, excellent chemical inertness and good thermal stability, amorphous carbon film materials are widely used in machinery, tribology, corrosion protection, aviation, etc. Aerospace and other fields have broad application prospects. [0003] At present, the main methods for preparing doped amorphous carbon thin film materials include physical vapor deposition, electrochemical deposition, chemical vapor deposition and so on. Among these methods, physical vapor deposition is particularly widely used in industry. Usually, in a DC sputtering physical vapor deposition system, if the conductivity of the target is poor, posi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/34C23C16/26C23C16/50
Inventor 郝俊英刘小强
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com