InP single crystal wafer twin polishing method and device
A double-sided polishing, double-sided polishing machine technology, applied in the field of materials
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[0022] Preferred embodiments of the present invention will be specifically described below in conjunction with the accompanying drawings, wherein the accompanying drawings constitute a part of the application and are used together with the embodiments of the present invention to explain the principle of the present invention.
[0023] Embodiments of the present invention provide a double-sided polishing method for an InP single wafer, see figure 1 , the method includes:
[0024] S101, roughly polishing the InP single wafer on a double-sided polishing machine;
[0025] The rough polishing liquid in the embodiment of the present invention comprises alkaline colloidal silicon dioxide suspension, deionized water and sodium dichloroisocyanurate, and alkaline colloidal silicon dioxide suspension: deionized water: sodium dichloroisocyanurate The volume ratio is 1:10:(1.0~1.8), the pH value of the rough polishing liquid is 10-11, and the pressure of the rough polishing is (150~170) g...
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