Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Design and manufacture technology of sensor chip for detecting magnetic field and acceleration

A sensor chip and acceleration sensing technology, applied in the direction of magnetic field controlled resistors, acceleration measurement using inertial force, magnetic variable measurement, etc., can solve problems such as complex and narrow linear working range

Inactive Publication Date: 2013-05-01
陈磊
View PDF7 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The magnetoresistance change rate and magnetic field sensitivity of the TMR sensor are greater than those of the GMR sensor, but in terms of processing technology, the TMR sensor is more complex than the GMR sensor, the processing accuracy is less than 1 nanometer, and the linear working range is narrower.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Design and manufacture technology of sensor chip for detecting magnetic field and acceleration
  • Design and manufacture technology of sensor chip for detecting magnetic field and acceleration
  • Design and manufacture technology of sensor chip for detecting magnetic field and acceleration

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0031] Such as figure 1 As shown in , the magnetoresistive sensitive unit in the present invention includes a wafer substrate, a seed layer 1, a soft magnetic material layer 2, a conductive layer 3 wrapped by a soft magnetic material layer, and a combination of the soft magnetic layer and the conductive layer N-layer structure, while the sensitive unit forms a curved structure composed of N long lines in the plane.

[0032] Such as figure 1 As shown in , the wafer substrate material of the magnetoresistive sensitive unit can be a silicon wafer, a silicon carbide substrate, a sapphire substrate, a quartz glass substrate, etc., and the material of the sensitive unit seed layer 1 includes Cr, Ni, Cu, Au, Ag and composite layers formed by any combination thereof, the material of the sensitive unit soft magnetic material layer 2 includes CoFeB, C...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a design and manufacture technology of a sensing unit of a sensor and one or more types of sensor chips consisting of the sensing unit, in particular to one or more types of sensor chips capable of detecting the magnetic field parallel and vertical to the surface of the chip and the acceleration of an object. The invention has the advantages that the process is simple and easy, the sensitivity is high, and batched production is easily realized; the sensing unit of the sensor comprises a wafer substrate, a seed layer, a soft magnetic material layer, a conducting layer and a N-layer structure; the conducting layer is wrapped by the soft magnetic material layer; the N-layer structure is formed by combination of the soft magnetic material layer and the conducting layer; and simultaneously a bent structure is formed by N long lines in the plane (the sensing unit is a single-strip-shaped structure when N is equal to 1). The sensing unit of the sensor realizes single-axis, double-axis and three-axis magnetic field detection by different packaging forms. Simultaneously, due to the combination of the sensing unit of the sensor and a cantilever structure with magnetic mass blocks, the single-axis, double-axis and three-axis acceleration detection can be realized.

Description

Technical field: [0001] The invention relates to a sensor chip, especially a miniature magnetoresistive sensor chip, specifically a design and manufacturing technology of a sensor chip capable of detecting magnetic fields and accelerations parallel and perpendicular to the surface of the chip. Background technique: [0002] A magnetic sensor refers to a device that converts physical quantities that cause changes in the magnetic properties of sensing elements such as magnetic fields, currents, stress and strain, temperature, and light into electrical signals to detect corresponding physical quantities. Its outstanding feature is that it can realize non-contact measurement, the detection signal is almost not affected by the measured object, it is resistant to pollution and noise, it can work reliably even under very harsh environmental conditions, it is durable and has a long life. Because of this, magnetic sensors are widely used in various industrial occasions, such as milit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R33/09G01P15/08H01L43/08
Inventor 陈磊
Owner 陈磊
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products