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Preparation method for high-performance conducting copper slurry

A high-performance, copper paste technology, applied in the field of materials science, that can solve problems such as limiting the use of printing substrate materials

Active Publication Date: 2013-04-24
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The currently prepared nano-copper conductive paste requires a heat treatment temperature above 200°C after printing, which greatly limits its application range and the selection of printing substrate materials (the glass transition temperature of most polymer materials is lower than 200°C)

Method used

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  • Preparation method for high-performance conducting copper slurry
  • Preparation method for high-performance conducting copper slurry
  • Preparation method for high-performance conducting copper slurry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] (1) Copper acetate and n-octylamine are dissolved in ethylene glycol diethyl ether to obtain reaction solution A, wherein the concentration of copper acetate is 0.04mol / L, and the concentration of octylamine is 0.2mol / L; Obtain reaction solution B in ethylene glycol diethyl ether, wherein the concentration of trimethylaminoborane is 0.2mol / L;

[0040] (2) The reaction liquids A and B were transported by two high-pressure plunger pumps respectively, mixed by a three-way valve, and injected into a polytetrafluoroethylene capillary with a diameter of 1 mm and a length of 1.5 meters. The capillary was heated to 160°C with an oil bath. The flow rates (flow rates of A and B) were controlled so that the residence time of the mixed reaction solution in the capillary was 60 seconds. The product after the capillary reaction is collected in an airtight glass bottle filled with nitrogen, and the flow chart of the synthetic reaction is as follows: figure 1 As shown, the electron m...

Embodiment 2

[0044] (1) Copper acetate and n-octylamine are dissolved in ethylene glycol diethyl ether to obtain reaction solution A, wherein the concentration of copper acetate is 0.04mol / L, and the concentration of octylamine is 0.2mol / L; Obtain reaction solution B in ethylene glycol diethyl ether, wherein the concentration of trimethylaminoborane is 0.2mol / L;

[0045] (2) The reaction liquids A and B were transported by two high-pressure plunger pumps respectively, mixed by a three-way valve, and injected into a polytetrafluoroethylene capillary with a diameter of 1 mm and a length of 1.5 meters. The capillary was heated to 100°C with an oil bath. The flow rates (flow rates of A and B) were controlled so that the residence time of the mixed reaction solution in the capillary was 60 seconds. The product after the capillary reaction is collected in an airtight glass bottle filled with nitrogen, and the flow chart of the synthetic reaction is as follows: figure 1 As shown, the electron m...

Embodiment 3

[0049] (1) Copper acetate and n-octylamine are dissolved in ethylene glycol diethyl ether to obtain reaction solution A, wherein the concentration of copper acetate is 0.04mol / L, and the concentration of octylamine is 0.2mol / L; Obtain reaction solution B in ethylene glycol diethyl ether, wherein the concentration of trimethylaminoborane is 0.2mol / L;

[0050] (2) The reaction liquids A and B were transported by two high-pressure plunger pumps respectively, mixed by a three-way valve, and injected into a polytetrafluoroethylene capillary with a diameter of 1 mm and a length of 1.5 meters. The capillary was heated to 160°C with an oil bath. The flow rates (flow rates of A and B) were controlled so that the residence time of the mixed reaction solution in the capillary was 600 seconds. The product after the capillary reaction is collected in an airtight glass bottle filled with nitrogen, and the flow chart of the synthetic reaction is as follows: figure 1 As shown, the electron ...

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Abstract

The invention discloses a preparation method for high-performance conducting copper slurry. The preparation method includes the steps of firstly, dissolving copper precursor and surface protective agent in organic solvent to obtain reaction liquid A; dissolving reducing agent in organic solvent to obtain reaction liquid B; secondly, feeding reaction liquid A and B into a micro-reactor respectively through a delivering pump, and mixing for reaction; thirdly, adding precipitator to reaction liquid obtained in the second step, separating by filtering or centrifuging, and cleaning obtained precipitate; and fourthly, dispersing cleaned precipitate with non-polar or weak-polar solvent to obtain the high-performance conducting copper slurry. The conducting copper slurry obtained by the preparation method requires low thermal treatment temperature after printing, and is high in metal content which can exceed 60%.

Description

technical field [0001] The invention relates to a preparation method of conductive paste, in particular to a preparation method of high-performance conductive copper paste, belonging to the field of material science. Background technique [0002] Printed electronics technology is an emerging hot technology. The full printed circuit technology that uses conductive ink instead of etching technology to make circuits has become the development direction of modern printed circuit manufacturing technology. Fully printed circuit is one of the key technologies of printed electronics, and its key lies in the preparation of conductive paste (conductive ink) with high conductivity and high stability. [0003] With the rise of nanotechnology, conductive paste prepared with metal nanoparticles has attracted more and more researchers' attention. Nano metal conductive paste can retain the good electrical conductivity of metal; at the same time, due to the surface effect and small size eff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/24B82Y40/00
Inventor 张凌林恒伟
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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