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Method for preparing Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film via sol-gel process

A bi0.85sm0.15fe1-xcrxo3, ferroelectric thin film technology, applied in the field of functional materials, can solve the problems of large leakage conductance of pure phase BiFeO3, inability to obtain saturated electric hysteresis loop, limit practical application, etc., achieve chemical composition Precise and controllable, increased number of flips, improved ferroelectricity

Inactive Publication Date: 2013-04-17
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, pure phase BiFeO 3 There is a problem of large leakage conductance, which prevents him from obtaining a saturated hysteresis loop and limits its practical application

Method used

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  • Method for preparing Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film via sol-gel process
  • Method for preparing Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film via sol-gel process
  • Method for preparing Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film via sol-gel process

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally dry it with nitrogen.

[0031] Step 2: Bake the FTO / glass substrate in a 60°C oven for 5 minutes, take it out and let it stand at room temperature.

[0032] Step 3: Place the clean FTO / glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0033] Step 4: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Sm(NO 3 ) 3 ·6H 2 O and Cr(NO 3 ) 3 9H 2 O was dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride at a molar ratio of 0.90:1.00:0.15:0.00, and then adding ethanolamine to the mixture to adjust the viscosity. After magnetic stirring for 3 hours, the metal ion concentration was 0.003mol / L. The stable Bi 0.85 SM 0...

Embodiment 2

[0038] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally dry it with nitrogen.

[0039] Step 2: Bake the FTO / glass substrate in a 60°C oven for 5 minutes, take it out and let it stand at room temperature.

[0040] Step 3: Place the clean FTO / glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0041] Step 4: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Sm(NO 3 ) 3 ·6H 2 O and Cr(NO 3 ) 3 9H 2 O is dissolved in the mixed solution of ethylene glycol methyl ether and acetic anhydride at a molar ratio of 0.90:0.99:0.15:0.01, and then ethanolamine is added to the mixed solution to adjust the viscosity. After magnetic stirring for 3 hours, a metal ion concentration of 0.3mol / L is obtained. S...

Embodiment 3

[0046] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO substrate in detergent,

[0047] Ultrasonic cleaning in acetone and ethanol, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally blow dry with nitrogen.

[0048] Step 2: Bake the FTO / glass substrate in a 60°C oven for 5 minutes, take it out and let it stand at room temperature.

[0049] Step 3: Place the clean FTO / glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0050] Step 4: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Sm(NO 3 ) 3 ·6H 2 O and Cr(NO 3 ) 3 9H 2 O is dissolved in the mixture of ethylene glycol methyl ether and acetic anhydride at a molar ratio of 0.90:0.98:0.15:0.02, and then adding ethanolamine to the mixture to adjust the viscosity. After magnetic stirring for 3 hours, the metal ion concentration is 0.01mol / L. The stable Bi 0.85 SM 0.15...

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Abstract

The invention discloses a method for preparing a Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film via a sol-gel process. The method is carried out by the following steps of: washing an FTO (Fluorinedoped Tin Oxide) substrate and subsequently irradiating via ultraviolet light; using bismuth nitrate, ferric nitrate, samarium nitrate and chromic nitrate as raw materials (the bismuth nitrate excesses by 5%), dissolving the above raw materials in mixed ethylene glycol monomethyl ether and acetic anhydride according to a mole ratio of 0.90: (1-x):0.15:x (x is 0.00, 0.01, 0.02 or 0.03), then adding ethanol amine to adjust a viscosity and obtain a stable BiFeO3 (bismuth ferrite) precursor solution with a metal ion concentration of 0.003-0.3mol / L; and homogenizing and subsequently obtaining a dry film, then using a layer-by-layer annealing process to obtain a crystal-state Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film. The method disclosed by the invention has the advantages of simple device requirement, easy achievement of experiment condition, good uniformity of the prepared films and easy control of the doping amount, so that the ferroelectric performance of the film is greatly enhanced.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to the preparation of Bi on the surface of a functionalized FTO / glass substrate 0.85 SM 0.15 Fe 1-x Cr x o 3 method for ferroelectric thin films. Background technique [0002] In recent years, BiFeO 3 As a new type of ferromagnetoelectric material, it has ferroelectricity and antiferromagnetism, accompanied by weak ferromagnetism, which has attracted great interest. BiFeO 3 It has a simple perovskite structure with a trigonal twist, and has both ferroelectric order (TC=810°C) and G-type antiferromagnetic order (TN=380°C) at room temperature. It is one of the few single-phase multiferroic materials . BiFeO 3 Magnetoelectric coupling is widely used in information storage, spintronic devices, information storage, image display, pyroelectric effect, uncooled infrared focal plane array, etc. However, pure phase BiFeO 3 There is a problem of large leakage conductance, which pre...

Claims

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Application Information

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IPC IPC(8): C04B35/40C04B35/624
Inventor 谈国强刘文龙
Owner SHAANXI UNIV OF SCI & TECH
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