Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Shift register unit, grid driving circuit and display device

A technology for shift registers and gates, which is applied in the field of gate drive circuits, display devices, and shift register units. It can solve problems affecting product quality and stability of shift register units, so as to improve stability and reduce gate The effect of extreme bias

Active Publication Date: 2013-04-10
BOE TECH GRP CO LTD +1
View PDF3 Cites 43 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The disadvantage of such a bidirectional scanning shift register unit is that the threshold voltage of the pull-down transistor will also drift under DC bias, which has a great impact on the stability of the shift register unit and affects the quality of the product.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shift register unit, grid driving circuit and display device
  • Shift register unit, grid driving circuit and display device
  • Shift register unit, grid driving circuit and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] The transistors used in all embodiments of the present invention can be thin film transistors or field effect transistors or other devices with the same characteristics. Since the source and drain of the transistors used here are symmetrical, there is no difference between the source and the drain. of. In the embodiment of the present invention, in order to distinguish the two poles of the transistor except the gate, one pole is called the source, and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a shift register unit, a grid driving circuit and a display device, belonging to the technical filed of displaying. The grid bias of a pull-down transistor can be improved, and the stability of the shift register unit can be increased. The shift register unit comprises a first pull-up module, a first scanning module, a control module, a first pull-down module and a second pull-down module. The embodiment of the invention is used for realizing grid driving scanning from top to bottom or from bottom to top.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a shift register unit, a gate drive circuit and a display device. Background technique [0002] With the development of display technology, liquid crystal displays have been widely used in various display fields including households, public places, office places and personal electronic products. The liquid crystal display panel mainly includes a liquid crystal cell formed by an array substrate and a color filter substrate, a polarizer, and a backlight module. There are a large number of TFTs (Thin Film Transistor, Thin Film Transistor) formed by overlapping gate lines and data lines on the array substrate. The gate lines control the switching of TFTs. When the TFTs are turned on, the pixel electrodes are charged or discharged through the data lines to control Depending on the magnitude of the voltage applied to the liquid crystal molecules, the light passing through the liquid ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C19/28G09G3/36
CPCG11C19/28G11C19/287G09G2310/0286G09G3/3696
Inventor 胡祖权王国磊马睿胡明
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products