Method for preparing Nb3Sn containing silicon and carbon

A technology of superconducting materials and elements, applied in nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve problems such as low critical current density and damage to superconducting ability of materials

Inactive Publication Date: 2013-03-27
JIANGSU WINAD LIGHTING TECH
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, currently prepared Nb 3 The critical current density of Sn materials is relatively low compared with low-temperature superconductors and A15 superconductors, and it will decrease sharply with the increase of magnetic field strength.
[0003] Increase Nb 3 The critical current density of Sn is a difficult problem in this field, because when the current passes through the superconductor, electron vortices are generated, and the movement of electron vortices consumes energy, thereby destroying the superconducting ability of the material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0008] Nb containing silicon and carbon of the present invention 3 The preparation method of Sn comprises the steps:

[0009] The present invention adds nano Si / N / C powder in raw material Nb powder, Sn powder, and raw material purity is commercially available chemical pure, and the mol ratio of its composition is: Nb: Sn: Si / N / C powder=(0.8-0.975 ):(1.6-1.95):(0.025-0.2). Nb powder, Sn powder, and nano Si / N / C powder are prepared and mixed according to the molar ratio (0.8-0.975): (1.8-1.95): (0.025-0.2), and then sintered or forged to make a superconducting material; The superconducting material is placed in a vacuum furnace, filled with argon after vacuuming, and kept at 500°C-800°C for 1.5-3 hours, and finally Nb containing Si and C elements is obtained. 3 Sn superconducting material.

[0010] Nb 3 The Sn crystal lacks structural defects that can pin the flux creep, so its critical current decreases rapidly with the increase of the magnetic field intensity. Therefore, m...

Embodiment 1

[0014] Preparation (Nb 3 Sn) 0.95 (SiC) 0.05 superconducting material. Accurately weigh Nb powder, Sn powder, and SiC whiskers according to the molar ratio of 0.95:1.9:0.05 and mix them evenly. After sintering or forging, keep them warm at 650°C for 2 hours in an argon vacuum furnace with a flowing atmosphere, and then cool in a vacuum furnace. to room temperature to obtain Nb containing Si and C elements 3 Sn superconducting material. The critical current density of the prepared strip is 4.5×10 3 A / cm 2 (4.2K, 10T).

Embodiment 2

[0016] Preparation (Nb 3 Sn) 0.8 (SiC) 0.2 superconducting material. Accurately weigh Nb powder, Sn powder, and SiC whiskers according to the molar ratio of 0.8:1.6:0.2 and mix them evenly. After sintering or forging, keep them in an argon vacuum furnace with a flowing atmosphere at 700°C for 1.5 hours, and then cool them in a vacuum furnace. to room temperature to obtain Nb containing Si and C elements 3 Sn superconducting material.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for preparing Nb3Sn containing silicon and carbon, comprising the following steps of uniformly mixing Nb powder, Sn powder and nanometer Si / N / C powder in the molar ratio of (0.8-0.975): (1.8-1.95): (0.025-0.2), obtaining a superconducting material after sintering or forging, putting the superconducting material in a vacuum furnace, introducing argon after vacuumizing, holding the temperature for 1.5-3h at the temperature of 500-800 DEG C and finally obtaining the Nb3Sn superconducting material containing the silicon element and the carbon element. The obtained Nb3Sn superconducting material has the capability of high flux pinning.

Description

technical field [0001] The invention relates to a preparation method of a superconducting material, in particular to a doped Nb 3 The preparation method of Sn. Background technique [0002] Nb 3 Sn is an intermetallic compound superconducting material with the highest critical transition temperature currently in practical use. The advantages of high transition temperature, large coherence length, high upper critical field, no weak connection at grain boundary, simple structure and low cost make Nb 3 Sn has become the most commonly used superconducting material at present. Nb 3 Sn shows a great advantage. However, currently prepared Nb 3 Compared with low-temperature superconductors and A15 superconductors, the critical current density of Sn materials is relatively low, and it will decrease sharply with the increase of magnetic field strength. [0003] Increase Nb 3 The critical current density of Sn is a difficult problem in this field, because electron vortices are ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G99/00B82Y30/00
Inventor 虞浩辉周宇杭吕锁方顾忠杰
Owner JIANGSU WINAD LIGHTING TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap