LED chip
An LED chip, N-type technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of affecting the luminous efficiency of LED chips, the N-level solder layer 38 is too long, affecting the packaging quality rate, etc., to avoid electrode soldering. Or desoldering, increasing the area of the light-emitting area, and improving the effect of the good rate
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[0078] Combine below Figure 2 to Figure 17 , the present invention is further described:
[0079] Such as figure 2 As shown, the substrate 1 is a carrier, generally made of materials such as sapphire, silicon carbide or GaN. Buffer layer 2 is a transitional layer on which high-quality N, P, quantum wells and other materials are grown. LED is composed of pn structure, buffer layer 2, N-type layer 3 layers, N-type confinement layer 4, P-type confinement layer 6 and P-type layer 7 are to form P and N-type materials required for making LED. The light-emitting region layer 5 is the light-emitting region of the LED, and the color of the light is determined by the structure of the active region. P-type ohmic contact layer 8 is the last layer of material growth, and the carrier doping concentration of this layer is relatively high, the purpose is to make smaller ohmic contact resistance. The P-type metal ohmic contact layer is not formed by growth, but by evaporation or sputteri...
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