Manufacturing method of LED (light-emitting diode) chip with inverted structure

Abstract

The invention relates to a manufacturing method of an LED (light-emitting diode) chip with an inverted structure. The LED chip comprises an N-type electrode formation region and a P-type electrode formation region, wherein the N-type electrode formation region comprises a substrate, a buffer layer, an N-type layer, an N-type respective limiting layer, an active region layer, a P-type respective limiting layer, a P-type layer, a P-type ohmic contact layer, a light reflecting layer and an insulating film; one end face of an N-type electrode passes through the insulating film so as to be connected with the light reflecting layer, and the other end face of the N-type electrode is connected with a heating panel through a PCB (printed circuit board); the P-type electrode formation region comprise a substrate, a buffer layer, an N-type layer and the insulating film, one end of a P-type electrode passes through the insulating film so as to be connected with the N-type layer, and the other end of the P-type electrode is connected with the heating panel by virtue of the PCB; and the two end faces, respectively connected with the PCB, of the N-type electrode and the P-type electrode are positioned at a same horizontal plane. The manufacturing method provided by the invention has the advantages that the N-type electrode and P-type electrode of the LED chip are manufactured in the same surface, the package yield of a chip inversion process is increased, thereby avoiding the occurrence of the electrode rosin joint or sealed-off state.

Description

Technical field [0001] The invention relates to an LED chip structure, in particular to a method for manufacturing an LED chip with a flip-chip structure. Background technique [0002] Generally, the light-emitting surface of the blue, green or violet LED chip fabricated on a sapphire substrate is the growth surface of the epitaxial material, that is, the P-type surface. In the LED packaging process, the sapphire substrate surface is directly fixed on the heat sink. In the working process of the LED, the light-emitting area-the active area is the source of heat generation of the device. Since the sapphire substrate itself is an insulator material, and its thermal conductivity is relatively poor compared to GaN materials, there is a certain limit on the working current of the LED device that is mounted to ensure the luminous efficiency and working life of the LED. In order to improve the heat dissipation performance of the device, a LED chip structure is designed, that is, an LE...

AI Technical Summary

Problems solved by technology

[0005] The present invention designs a manufacturing method of an LED chip with a flip-chip structure, which solves the technical problem that the existing LED chip with a flip-chip structure is prone to defects such as weak soldering or desoldering of electrodes and low luminous efficiency of the chip

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