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Chemical-mechanical polishing method for simultaneously polishing phase-change material and tungsten

A chemical-mechanical and phase-change material technology, which is applied in the manufacture of polishing compositions containing abrasives, electrical components, semiconductors/solid-state devices, etc., can solve the problems of insufficient polishing rate of substrates, achieve low polishing surface damage, and improve polishing speed effect

Inactive Publication Date: 2012-12-12
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to provide a new chemical mechanical polishing method for phase change materials and tungsten at the same time, which can solve the problem of insufficient polishing rate for substrates containing phase change materials and tungsten simultaneously in the prior art

Method used

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  • Chemical-mechanical polishing method for simultaneously polishing phase-change material and tungsten

Examples

Experimental program
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Effect test

Embodiment 1

[0027] The abrasive is made of silicon dioxide, the amount of which accounts for 5% of the mass percentage of the entire polishing liquid, and the oxidizing agent is made of 2KHSO 5 ·KHSO 4 ·K 2 SO 4 , its consumption accounts for 1% of the mass percentage of the whole polishing liquid, the concentration of iron nitrate in the polishing liquid is controlled at 1000ppm, and the pH value is adjusted to 1.5 with nitric acid.

[0028] The substrate that needs to be simultaneously polished with phase change materials and tungsten is placed on a polishing pad for chemical mechanical polishing. Polishing conditions: the polishing machine is Logitech (UK) 1PM52 type, polytex polishing pad, 4cm×4cm square wafer (Wafer), The grinding pressure is 4psi, the grinding table speed is 90 rpm, the grinding head rotation speed is 140 rpm, the polishing liquid droplet speed is 140ml / min, and complexing agent, surfactant and other components are added as needed.

Embodiment 2

[0030] The abrasive is made of silicon dioxide, the amount of which accounts for 5% of the mass percentage of the entire polishing liquid, and the oxidizing agent is made of 2KHSO 5 ·KHSO 4 ·K 2 SO 4 , its consumption accounts for 2% of the mass percentage of the whole polishing solution, the concentration of iron nitrate in the polishing solution is controlled at 3000ppm, and the pH value is adjusted to 1.5 with nitric acid.

[0031] Referring to the method described in Example 1, the phase change material and tungsten were simultaneously polished.

Embodiment 3

[0033] The abrasive is made of silicon dioxide, the amount of which accounts for 5% of the mass percentage of the entire polishing liquid, and the oxidizing agent is made of 2KHSO 5 ·KHSO 4 ·K 2 SO 4 , its consumption accounts for 0.1% by mass percentage of the entire polishing liquid, the concentration of iron nitrate in the polishing liquid is controlled at 50 ppm, and the pH value is adjusted to 1.5 with nitric acid.

[0034] Referring to the method described in Example 1, the phase change material and tungsten were simultaneously polished.

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Abstract

The invention provides a method for chemically and mechanically polishing tungsten and a phase-change material (PCM) such as germanium, antimony and tellurium (Ge, Sb and Te). The method includes placing the to-be-polished phase-change material and the to-be-polished tungsten on a polishing pad; mixing and blending grinding agents, selective oxidants containing monopersulfate composite salt and materials containing ferric ions into polishing solution; and applying the polishing solution to the surfaces of the phase-change material and the tungsten to simultaneously polish the surfaces of the phase-change material and the tungsten by the aid of polishing equipment. The method has the advantages that a polishing process can be quickly and effectively completed, damage to the polished surfaces is low, the polished surfaces are free of residual polishing solution, and requirements of storage devices made of phase-change materials to chemical-mechanical polishing can be met.

Description

technical field [0001] The invention relates to a chemical mechanical polishing method, in particular to a chemical mechanical polishing method for simultaneously polishing phase change materials and tungsten. Background technique [0002] Phase-change memory is a process in which the material changes from an amorphous state to a crystalline state, and then back to an amorphous state. The non-crystalline and crystalline states exhibit different reflective and resistive properties. 0" and "1" to store data. Phase change memory is a promising data storage technology. It is faster than flash memory, has better resilience, and can achieve more than 100 million times of erasing and writing. [0003] The phase-change memory cell is composed of extremely small chalcogenide alloy particles, which can rapidly transform from an ordered crystalline state (low resistance state) to a disordered amorphous state ( resistance high state). The difference in resistivity between the crysta...

Claims

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Application Information

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IPC IPC(8): H01L21/321H01L45/00C09G1/02C23F3/06
Inventor 王晨何华锋
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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