Film LED (light-emitting diode) chip device as well as manufacturing method and application thereof
A device manufacturing method and LED chip technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as increased production costs, changes, lack of effective support and heat sinks
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[0067] The present invention will be further described below in conjunction with the drawings and specific embodiments:
[0068] See image 3 , The thin-film LED chip device includes:
[0069] A GaN-based epitaxial film base layer 10 composed of an N-type semiconductor layer 11, an active layer 12, and a P-type semiconductor layer 13 in this order. In order to improve the external quantum efficiency of the manufactured thin-film LED chip device, the surface of the N-type semiconductor layer 11 is a roughened surface 22; or, a passivation layer (not shown) is deposited on the surface of the N-type semiconductor layer 11, The passivation layer is SiO 2 Or Si 3 N 4 The material has a thickness of 0.1μm-1500μm.
[0070] The etching groove 14 extends along the surface of the P-type semiconductor layer 13 to the N-type semiconductor layer 11.
[0071] A metal reflective layer 15 in ohmic contact is attached to the surface of the P-type semiconductor layer 13.
[0072] An insulating passivat...
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