Semiconductor module

A technology of semiconductors and casings, which is applied in the fields of semiconductor devices, semiconductor/solid-state device components, and electric solid-state devices, etc., can solve the problems of increased manufacturing costs and high prices

Inactive Publication Date: 2012-08-15
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SiC devices are more expensive than Si devices, so converting a power module into a SiC device is accompanied by an increase in manufacturing cost

Method used

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Examples

Experimental program
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Effect test

Embodiment approach 1

[0022] figure 1 It is a circuit diagram of a PFC module which is a semiconductor module of the present invention. As shown in the figure, the PFC module has: first to fourth diodes D1 R , D1 S 、D2 R 、D2 S Diode bridge constituted; first and second switching elements SW for power factor improvement R 、SW S ; Control the first and second switching elements SW R 、SW S driver IC100.

[0023] The diode bridge is constructed as follows: a first and a second diode D1 with upper arms whose cathodes are connected to each other R , D1 S And the third and fourth diodes D2 of the lower arm whose anodes are connected to each other R 、D2 S , the first diode D1 R and the third diode D2 R connected in series and the second diode D1 S and the fourth diode D2 S connected in series. first diode D1 R anode of the third diode D2 and R The cathode of the R terminal is connected, and the second diode D1 S anode of the fourth diode D2 and S The S terminal to which the cathode is c...

Embodiment approach 2

[0036] Figure 4 It is a block diagram of the PFC module of Embodiment 2. In this embodiment, inside the housing 200, the first and second diodes D1 as SiC devices R , D1 S Distributed in the third and fourth diodes D2 R 、D2 S and the first and second switching elements SW R 、SW S outside. That is, the first and second diodes D1 R , D1 S It is arranged near one side surface of the case 200 where the lead frames 101 to 104 protrude. In addition, as in Embodiment 1, the first and second diodes D1 are mounted R , D1 S The first lead frame 104 is not downward inside the housing 200 (the first and second diodes D1 R , D1 S perpendicular to the mounting surface) is bent.

[0037] According to this configuration, the first and second diodes D1 can be connected R , D1 S The lead wire wiring 110 of the lead frames 102 and 103 is shortened. The length of the wire wiring 110 affects the surge current tolerance of the PFC module, and shortening it can improve the surge cur...

Embodiment approach 3

[0039] Figure 5 It is a block diagram of the PFC module of Embodiment 3. In this embodiment, as in Embodiment 2, inside the housing 200, the first and second diodes D1 as SiC devices are R , D1 S Distributed in the third and fourth diodes D2 R 、D2 S and the first and second switching elements SW R 、SW S outside (the vicinity of one side surface of the housing 200 where the lead frames 101 to 104 protrude).

[0040] In addition, the SiC device has low resistance, so it is possible to reduce the size of the chip. For example, in a module with a rated value of 600V·20A (rms), the first and second diodes D1 can be R , D1 S The chip size becomes about half. Therefore, if the first and second diode D1 R , D1 S Closer to the outer side, a space is formed in the central portion of the housing 200 . In this embodiment, the through-hole 122 is arranged in this space. That is, in a plan view, the first and second diodes D1 R , D1 S At least one of them is disposed between...

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Abstract

A PFC module includes: a diode bridge having first and second diodes in the upper arm, and third and fourth diodes in the lower arm; and first and second switching elements for power factor correction. The first and second diodes are Schottky barrier diodes formed by using a wide bandgap semiconductor. The third and fourth diodes, and the first and second switching elements are Schottky barrier diodes and switching elements respectively formed by using silicon.

Description

technical field [0001] The present invention relates to the structure of a semiconductor module including a power factor correction (Power Factor Correction (PFC): power factor correction) circuit. Background technique [0002] Conventionally, when a PiN (P-intrinsic-N) diode formed using silicon (Si) is used in a semiconductor module (power module) for power control, recovery due to the accumulation effect of minority carriers occurs Therefore, the recovery current becomes one of the factors that increase the loss of the power module. On the other hand, it can be significantly reduced in Schottky barrier diodes. Therefore, Schottky barrier diodes (SBDs) formed using Si are often used in conventional power modules. [0003] In addition, semiconductor elements using wide bandgap semiconductors are considered promising as next-generation switching elements capable of achieving high withstand voltage, low loss, and high heat resistance. Examples in which a semiconductor devi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/07H02M1/42
CPCH02M1/4208H02M7/217H01L23/49537H01L23/49551H01L23/49575H01L25/165H01L2224/32245H01L2224/48247H01L2224/73265H01L2924/13055H01L2924/12032H01L24/73Y02B70/10H01L2924/00012H01L2924/00
Inventor 加藤正博中川信也
Owner MITSUBISHI ELECTRIC CORP
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