Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multilayer thin film OTFT (organic thin film transistor) formaldehyde gas sensor and preparation method thereof

A technology of formaldehyde sensor and multi-layer thin film, which is applied in the direction of coating, instrument, scientific instrument, etc., can solve the problems of poor stability and repeatability, slow response time, poor selectivity, etc., achieve low cost, improve device performance, and small size Effect

Inactive Publication Date: 2012-08-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF0 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In view of the above prior art, the technical problem to be solved by the present invention is: the existing formaldehyde gas sensor has poor selectivity, slow response time, low sensitivity, poor stability and repeatability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multilayer thin film OTFT (organic thin film transistor) formaldehyde gas sensor and preparation method thereof
  • Multilayer thin film OTFT (organic thin film transistor) formaldehyde gas sensor and preparation method thereof
  • Multilayer thin film OTFT (organic thin film transistor) formaldehyde gas sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0041] Multilayer thin film OTFT formaldehyde gas sensor prepared by MEMS technology and thin film, combined with figure 1 As shown, an n-type silicon substrate is taken, and the insulating layer silicon dioxide is prepared by thermal oxidation, gold is used as an electrode, and titanium is used as a transition layer. The electrode layer is located on the transition layer for the purpose of enhancing adhesion. The source a, The drain b and gate c three-terminal electrodes respectively have external leads for testing. The invention utilizes the characteristics of the OTFT sensor structure itself, and directly adopts the method of sintering the conductive glue on the silicon chip substrate to lead out the grid, which greatly simplifies the preparation process and improves the performance of the device.

[0042] combine figure 2 Shown is the gr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a multilayer thin film OTFT (organic thin film transistor) formaldehyde gas sensor and a preparation method thereof. The sensor is in a bottom-grid bottom-contact device structure, and is provided with a source a, a drain b and a grid c, wherein a trench between the source and the drain is designed as an interdigital structure; the source and the drain are respectively a gold / titanium double-layer film, the gold material is used as an electrode layer, and the titanium material is used as a transition layer; and a sensitive thin film, which is an organic semiconductor material-inorganic nano oxide multilayer thin film, is arranged between the source and the drain. The invention combines the organic semiconductor material with the inorganic nano oxide, and adopts a multilayer thin film mode to prepare the sensitive thin film, thereby greatly enhancing the sensitivity and response speed of the sensor. On the premise of implementing formaldehyde gas detection, the invention breaks through the limitation in material selection in the traditional OTFT device, and adopts the MEMS technology to prepare the OTFT device. The invention has the advantages of small size, low cost and the like, can be integrated into an array, and opens up a new way for preparation and application of the OTFT formaldehyde sensor.

Description

technical field [0001] The invention relates to the fields of microelectromechanical system gas sensors and organic / inorganic nanocomposite materials, in particular to a multilayer thin-film OTFT formaldehyde gas sensor based on an organic semiconductor material-inorganic nanometer metal oxide and a manufacturing method thereof. Background technique [0002] Formaldehyde is an organic volatile compound that is very harmful to human health. The United States Environmental Protection Agency EPA announced formaldehyde as a substance that causes acute respiratory diseases as early as 1998. When people inhale formaldehyde, symptoms such as headache, fatigue, cough, and asthma will occur; the World Health Organization lists it as "possibly harmful to humans." carcinogen". Therefore, the detection of indoor air pollutants such as formaldehyde has become one of the research hotspots and important topics in the scientific community. In recent years, there have been many studies on ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N27/414B81C1/00
Inventor 太惠玲蒋亚东李娴但文超
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com