Detecting structure and detecting method for temperature coefficient of resistance (TCR)

A technology of resistance temperature coefficient and detection structure, which is applied in the direction of single semiconductor device testing, etc., can solve the problems of complex process, long time and time-consuming heating of the device under test, etc., achieve rapid heating, not easy to electromigration failure, and improve the detection resistance temperature The effect of the coefficient

Active Publication Date: 2012-08-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the existing method for testing the temperature coefficient of resistance of a polysilicon device, the time for heating the device to be tested is too long, and after heating, it needs to be cooled for a certain period of time, so that the device to be tested is kept at a constant temperature, which makes the testing process too complicated and difficult. It takes a long time, so it cannot meet the requirements of the existing wafer electrical testing (WAT: Wafer Acceptance Test) of semiconductor devices; the wafer electrical testing includes the requirements of rapid testing and batch testing

Method used

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  • Detecting structure and detecting method for temperature coefficient of resistance (TCR)
  • Detecting structure and detecting method for temperature coefficient of resistance (TCR)
  • Detecting structure and detecting method for temperature coefficient of resistance (TCR)

Examples

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no. 1 example

[0074] Please refer to figure 1 , which is a schematic cross-sectional view of the temperature coefficient of resistance detection structure described in this embodiment, including:

[0075] A semiconductor substrate 100 ; a device under test 102 located on the surface of the semiconductor substrate 100 , the material of the device under test 102 is polysilicon.

[0076] The role of the semiconductor substrate 100 is to provide a working platform for the subsequent formation of semiconductor devices, and the materials of the semiconductor substrate 100 are n-type silicon, p-type silicon, silicon on insulating layer (SOI), silicon nitride and gallium arsenide and other III-V compounds, etc.

[0077] The device under test 102 can be a device such as a micro-actuator or a microsensor in a MEMS semiconductor device; between the semiconductor substrate 100 and the device under test 102, according to the process requirements of a specific semiconductor device, there can also be Se...

no. 2 example

[0115] Please refer to Figure 4 , which is a schematic cross-sectional view of the temperature coefficient of resistance detection structure described in this embodiment, including:

[0116] A semiconductor substrate 200 ; a device under test 202 located on the surface of the semiconductor substrate 200 , and the material of the device under test 202 is polysilicon.

[0117] The functions and materials of the semiconductor substrate 200 are the same as those described in the first embodiment, and will not be repeated here.

[0118] The device under test 202 may be a micro-actuator, a micro-sensor and other devices in a MEMS semiconductor device;

[0119] Between the semiconductor substrate 200 and the device under test 202, according to the process requirements of specific semiconductor devices, there may also be several polysilicon device layers electrically isolated by isolation layers.

[0120] In this embodiment, there is a dielectric layer 201 between the semiconductor...

no. 3 example

[0153] Please refer to Figure 5 , which is a schematic cross-sectional view of the temperature coefficient of resistance detection structure described in this embodiment, including:

[0154] A semiconductor substrate 300 ; a device under test 302 located on the surface of the semiconductor substrate 300 , and a material of the device under test 302 is polysilicon.

[0155] The functions and materials of the semiconductor substrate 300 are the same as those described in the first embodiment, and will not be repeated here.

[0156] The device under test 302 may be a micro-actuator, a micro-sensor and other devices in a MEMS semiconductor device;

[0157] Between the semiconductor substrate 300 and the device under test 302, according to the process requirements of specific semiconductor devices, there may also be several polysilicon device layers electrically isolated by insulating layers.

[0158] In this embodiment, there is a dielectric layer 301 between the semiconductor ...

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Abstract

Disclosed are a detecting structure and a detecting method for a TCR, wherein the detecting structure of the TCR comprises a semiconductor substrate; a component to be detected made of polycrystalline silicon is placed on the surface of the semiconductor substrate, and the two ends of the component to be detected are respectively connected with first conductive plugs which are respectively connected with first metal interconnection lines; a heating layer made of polycrystalline silicon is arranged opposite to the component to be detected, and the two ends of the heating layer are respectively connected with second conductive plugs which are composed of at least two conductive plugs and connected with second metal interconnection lines respectively; a sensor is placed above the component to be detected, and the two ends of the sensor are respectively connected with third conductive plugs. The detecting structure of resistance temperature coefficients has the advantage of being capable of increasing the heating speed and the temperature measuring speed for the component to be detected, and further increasing the speed for detecting resistance temperature coefficients.

Description

technical field [0001] The invention relates to semiconductor device technology, in particular to a detection structure and a detection method for the temperature coefficient of resistance. Background technique [0002] In MEMS (Micro-Electro-Mechanical Systems: micro-electro-mechanical systems) semiconductor devices such as micro-actuators and micro-sensors, the temperature coefficient of resistance (Temperature Coefficient of Resistance, referred to as TCR) of polysilicon devices can not only reflect the resistance of polysilicon devices at different temperatures The impact on the operation of the device under certain conditions also determines whether the thermoelectric properties of polysilicon devices can be effectively analyzed, such as thermal conductivity, thermal expansion coefficient, thermal diffusion, etc., thereby affecting the improvement and improvement of device performance. Important parameters. [0003] The temperature coefficient of resistance of polysili...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 高超李冰寒江红胡勇王哲献于涛
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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