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Device for continuously preparing two-dimensional nano films

A two-dimensional nano-film technology, applied in the direction of ion implantation plating, gaseous chemical plating, coating, etc., can solve the problem of large differences, restrict the development of two-dimensional nano-film, uneven distribution of carbon-containing gas source graphene film and other issues to achieve the effect of industrialization

Inactive Publication Date: 2012-08-01
徐明生 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, the electronic transport performance of two-dimensional nano-films such as graphene synthesized by a quartz tube furnace is quite different from that of graphene with a perfect crystal structure prepared by mechanical exfoliation. This difference mainly comes from The tube furnace equipment used to synthesize graphene-the existence of thermal field gradients and the uneven distribution of carbon-containing gas sources lead to the inability of tube furnaces to prepare uniform graphene films in a large area, which has severely restricted the technology of two-dimensional nano-films such as graphene films further development of
Therefore, tube furnaces are not suitable for large-area preparation of uniform two-dimensional nanofilms such as graphene.

Method used

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  • Device for continuously preparing two-dimensional nano films
  • Device for continuously preparing two-dimensional nano films
  • Device for continuously preparing two-dimensional nano films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] see figure 1 , the equipment for continuously preparing two-dimensional nano-films of the present invention includes that a feed chamber 4, a first processing chamber 8, a first balance chamber 10, a thin film preparation chamber 11, and a second balance chamber are sequentially arranged on the production line 12. The second processing chamber 13 and the discharge chamber 16; the feeding chamber 4 is provided with a valve 3 communicating with the atmosphere, and a valve 31 is arranged between the feeding chamber 4 and the first processing chamber 8, and the first A valve 32 is provided between the processing chamber 8 and the first balance chamber 10, a valve 33 is provided between the first balance chamber 10 and the film preparation chamber 11, and a valve 33 is provided between the film preparation chamber 11 and the second balance chamber 12. A valve 34 is provided between the second balance chamber 12 and the second processing chamber 13, a valve 35 is provided ...

Embodiment 2

[0044] see figure 2 , the equipment for continuously preparing two-dimensional nano-films of the present invention includes that a feed chamber 4, a first processing chamber 8, a first balance chamber 10, a thin film preparation chamber 11, and a second balance chamber are sequentially arranged on the production line 12. The second processing chamber 13 and the discharge chamber 16; the feeding chamber 4 is provided with a valve 3 communicating with the atmosphere, and a valve 31 is arranged between the feeding chamber 4 and the first processing chamber 8, and the first A valve 32 is provided between the processing chamber 8 and the first balance chamber 10, a valve 33 is provided between the first balance chamber 10 and the film preparation chamber 11, and a valve 33 is provided between the film preparation chamber 11 and the second balance chamber 12. A valve 34 is provided between the second balance chamber 12 and the second processing chamber 13, a valve 35 is provided ...

Embodiment 3

[0054] see image 3 , the equipment for continuously preparing two-dimensional nano-films of the present invention includes that a feed chamber 4, a first processing chamber 8, a first balance chamber 10, a thin film preparation chamber 11, and a second balance chamber are sequentially arranged on the production line 12. The second processing chamber 13 and the discharge chamber 16; the feeding chamber 4 is provided with a valve 3 communicating with the atmosphere, and a valve 31 is arranged between the feeding chamber 4 and the first processing chamber 8, and the first A valve 32 is provided between the processing chamber 8 and the first balance chamber 10, a valve 33 is provided between the first balance chamber 10 and the film preparation chamber 11, and a valve 33 is provided between the film preparation chamber 11 and the second balance chamber 12. A valve 34 is provided between the second balance chamber 12 and the second processing chamber 13, a valve 35 is provided b...

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Abstract

The invention discloses a device for continuously preparing two-dimensional nano films. The device is characterized in that: a feeding chamber, a first treatment chamber, a first balancing chamber, a film preparation chamber, a second balancing chamber, a second treatment chamber and a discharge chamber are sequentially arranged on a production line; a heating device is arranged in at least one of the feeding chamber, the first treatment chamber, the film preparation chamber, the second treatment chamber and the discharge chamber; a valve, a vacuum system and a gas pipeline are arranged between every two chambers, and a sample is transmitted among the chambers through a sample conveying device; and the film preparation chamber is provided with a film deposition system. The device is simple in structure and reliable in work, can be used for continuously preparing uniform two-dimensional nano films of graphene, transition metal sulfides, silylene, germanium alkene or boron nitride and the like in large area, and adapts to industrialized preparation of the two-dimensional nano films.

Description

Technical field [0001] The present invention involves a device for preparation of new materials, especially the continuous preparation of new two -dimensional nanomaterials such as graphene, over -plated metal sulfide, siliche, and boron nitride.The present invention has a simple structural characteristics and can be used to prepare new two -dimensional nanomaterials on a scale. Background technique [0002] Graphene (Graphene) has excellent two -dimensional electrical, optical, thermal, mechanical properties, and chemical stability. Graphene has extensive application prospects in ultra -fast optical electronic devices, clean energy, and sensors.Electronic transmission speed in graphene is 150 times that of silicon. Well -known companies such as IBM have prepared super fast optoelectronics devices that can reach Pachez. The University of California uses graphene to develop optical modem using graphene, which is expected to increase the network speed by 10,000 times.The demand for...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/22C23C16/44
Inventor 徐明生黄文符钟明轶
Owner 徐明生
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