Mold manufacture method and mold formed by said method

A technology of metal mold and manufacturing method, which is applied in the photoplate making process of patterned surface, semiconductor/solid-state device manufacturing, transportation and packaging, etc., and can solve the problems of filling holes that cannot be plated

Inactive Publication Date: 2012-07-25
WASEDA UNIV
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the conventional method, there are problems such as the inability to fill the hole with plating.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mold manufacture method and mold formed by said method
  • Mold manufacture method and mold formed by said method
  • Mold manufacture method and mold formed by said method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0069] First, a nanoscale pattern is formed on an Si oxide film which is an inorganic thin film formed on a Si substrate. Si substrates use 1-inch wafers. In addition, the specification of the formed pattern was 200 nm in diameter.

[0070] Then, a self-assembled film is formed by liquid phase growth on the pattern. In this example, a toluene solution containing 1 wt.% of a silane coupling agent heated to 60° C. was used as the first solution, and a self-assembled film was formed by dipping in the solution for 10 minutes. As the silane coupling agent, 3-[2-(2-aminoethylamino)ethylamino]propyl-trimethoxysilane (TAS) was used.

[0071] Next, a metal ion layer and a thin film plating layer are sequentially formed as a conductive layer. The metal ion layer was formed by immersing the Si substrate on which the self-assembled film had been formed in a solution containing Pd as the second solution for 1 minute. The solvent uses dilute hydrochloric acid. In addition, the concentr...

Embodiment 2）

[0078] Next, the adhesion between the inorganic thin film and the conductive layer was confirmed. Self-assembled films were formed on Si substrates using 3-[2-(2-aminoethylamino)ethylamino]propyl-trimethoxysilane (TAS) as a silane coupling agent. A metal ion layer of Pd is formed on this self-assembled film. Further, an electroless sample is formed on the metal ion layer. As a comparative example, a Si substrate given a Sn-Pd treatment was formed.

[0079] Adhesion was measured using the Figure 9 The assay device 10 is shown. The measurement device 10 includes an electronic digital scale 11 , a displacement meter 12 , a piezoelectric transmission device 13 , a microscope 14 and an electronic computer 15 .

[0080] The electronic digital scale 11 is provided with a sample pan 16 . The sample disk 16 is configured to hold the sample S in a state inclined at a predetermined angle. Also, its given angle is 30 degrees in this embodiment.

[0081] The piezoelectric actuator ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
adhesivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

Disclosed are a mold manufacture method capable of easily manufacturing molds having nanosized fine structures, and a mold formed by said method. The disclosed method is characterized by including a step for forming, on an inorganic thin film (1) having fine structures, a self-assembled film (2) configured from a silane coupling agent having functional groups including at least one of an amino group, a mercapto group, a thiol group, a disulfide group, a cyano group, a halogen group, and a sulfonic acid group; a conducting layer forming step for forming a conducting layer (3) on the aforementioned self-assembled film (2); and a step for forming a metal film (4) from an electrolytic plating on the aforementioned conducting layer (3).

Description

technical field [0001] The present invention relates to a method of manufacturing a metal mold and a metal mold formed by the method, and is particularly suitable for application to a metal mold having a fine structure. Background technique [0002] As shown in FIG. 12, it is a conventional method of producing a metal mold. A resist is coated on a glass substrate or a Si substrate 100, and a pattern 101 is formed on the resist using ultraviolet rays, electron beams, X-rays, or the like. The conductive layer 102 is formed thereon using a sputtering method (for example, Patent Document 1). Then, Ni plating is applied on the conductive layer 102 to form a metal film 103 . The metal film 103 is released from the mold to obtain the metal mold 104 . [0003] According to the above-mentioned conventional method, it is possible to fill holes with plating and the like without hindrance if the fine structure is submicron. [0004] prior art literature [0005] patent documents ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B29C33/38B29C59/02H01L21/027
CPCB82Y10/00G03F7/0002B82Y40/00Y10T428/24612
Inventor 本间孝之斋藤美纪子
Owner WASEDA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap