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Silicon nano-wire array or silicon nano-pore array Schottky junction type solar battery and preparation method thereof

A technology of silicon nanowire arrays and solar cells, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that limit the wide application of solar cells, the effect of anti-reflection layer is not very obvious, and restrict the efficiency of solar cells. Effects of weak absorption capacity, efficiency improvement, and low cost

Inactive Publication Date: 2012-07-11
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the appearance and use of the surface anti-reflection layer can reduce the loss of light absorption to a certain extent, it brings additional cost increase, and the effect of the anti-reflection layer is not very obvious
Therefore, the improvement of the efficiency of solar cells is restricted to a large extent, and the wide application of solar cells is also limited.

Method used

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  • Silicon nano-wire array or silicon nano-pore array Schottky junction type solar battery and preparation method thereof
  • Silicon nano-wire array or silicon nano-pore array Schottky junction type solar battery and preparation method thereof
  • Silicon nano-wire array or silicon nano-pore array Schottky junction type solar battery and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0021] see figure 1 In this embodiment, the silicon nanowire array or the silicon nanohole array Schottky junction solar cell has the following structure:

[0022] Al metal film back electrode layer 6 is set on the bottom surface of P-type silicon base layer 7, as the back side lead-out electrode; P-type silicon base layer 7 is positioned on Al metal film back electrode layer 6, as the base area of ​​solar cell; P-type silicon The nanowire array layer 8 is located on the upper surface of the P-type silicon base layer 7, the surface of the P-type silicon nanowire array layer 8 is wrapped with a Ti metal layer 9, and the Ti metal layer 9 and the P-type silicon nanowire array layer 8 form a small Tertiary junction; a Ti grid electrode 10 is arranged on the Ti metal layer 9 as a front-side lead-out electrode; a silicon nanowire array or a silicon nanohole array.

[0023] In this embodiment, the preparation method of silicon nanowire array or silicon nanohole array Schottky juncti...

Embodiment 2

[0026] Another example figure 1 As shown, the silicon nanowire array or silicon nanohole array Schottky junction solar cell in this embodiment has the following structure:

[0027] The Ti metal film back electrode layer 6 is set on the bottom surface of the N-type silicon base layer 7, as the back lead-out electrode; the N-type silicon base layer 7 is located on the Ti metal film back electrode layer 6, as the base area of ​​the solar cell; the N-type silicon nanometer The line array layer 8 is located on the upper surface of the N-type silicon base layer 7; the surface of the N-type silicon nanowire array layer 8 is wrapped with an Au metal layer or a Pt metal layer 9, and the Au metal layer or the Pt metal layer 9 and the N-type silicon The nanowire array layer 8 forms a Schottky junction; an Ag grid electrode 10 is set on the Au metal layer or Pt metal layer 9 as a front-side lead-out electrode; the silicon nanowire array or silicon nanohole array.

[0028] In this embodim...

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Abstract

The invention discloses a silicon nano-wire array or silicon nano-pore array Schottky junction type solar battery and a preparation method thereof. the preparation method is characterized in that an Al metal membrane back electrode layer is arranged on the bottom face of a P type silicon substrate layer and serves as a back lead-out electrode; the P type silicon substrate layer is arranged on the Al metal membrane back electrode layer and serves as a base region of the solar battery; a P type silicon nano-wire array layer is arranged on the upper surface of the P type silicon substrate layer, the surface of the P type silicon nano-wire array layer is coated with Ti metal layer and the Ti metal layer and the P type silicon nano-wire array layer form a Schottky junction; a Ti grid type electrode is arranged on the Ti metal layer and serves as a front lead-out electrode; and the silicon nano-wire array also can be replaced with a silicon nano-pore array. The preparation method has simple process steps, is suitable for large-scale production, can be used for preparing a solar battery with high light absorption capability and high photoelectric conversion efficiency and lays a foundation for the application of a silicon nano structure in the solar battery.

Description

technical field [0001] The invention relates to a silicon nanostructure Schottky junction solar cell. Background technique [0002] Facing the global energy shortage crisis and the continuous deterioration of the ecological environment, countries around the world are actively researching, developing and utilizing renewable energy, so as to realize the sustainable development of the energy industry and society. Solar energy is considered to be the best solution to the energy crisis and the deterioration of the ecological environment. [0003] A solar cell is a device that directly converts light energy into electrical energy through the photovoltaic effect or photochemical effect of a semiconductor p-n junction. P-n junction solar cells are currently widely used. In this solar cell, the p-n junction region absorbs incident photons to form hole-electron pairs, which are separated under the action of the built-in electric field to form photocurrent. It has high efficiency and...

Claims

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Application Information

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IPC IPC(8): H01L31/07H01L31/0224H01L31/18
CPCY02E10/50Y02P70/50
Inventor 揭建胜谢超吴春燕王莉彭强于永强郭惠尔朱志峰
Owner HEFEI UNIV OF TECH
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