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Stripping liquid for removing residual photoresist in semiconductor technology

A stripping solution and semiconductor technology, applied in the field of cleaning agents, can solve problems such as affecting production safety, affecting operation, and affecting degumming, etc., and achieves the effect of effective clean removal and wide applicable temperature range.

Active Publication Date: 2012-07-04
SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Immersion stripping is to arrange the substrates in a flower basket, immerse them in the stripping solution, and soak and strip them at high temperature. This stripping method is currently used by more and more manufacturers. As the material increases, it is easy to form bubbles when it is in contact with air under flowing conditions, and the number of bubbles becomes larger and larger. On the one hand, it will affect the glue removal. Seriously affect production safety

Method used

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  • Stripping liquid for removing residual photoresist in semiconductor technology
  • Stripping liquid for removing residual photoresist in semiconductor technology
  • Stripping liquid for removing residual photoresist in semiconductor technology

Examples

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Embodiment Construction

[0031] In the stripping solution of the present invention, the polymethylphosphoramide is preferably hexamethylphosphoramide, and the mass percentage content is preferably 10-70%. The hexamethylphosphoramide compound has a flash point of >100°C and a boiling point of 235°C, and has a strong dissolution effect on photoresists. When the mass percentage of hexamethylphosphoramide is lower than 10% or higher than 70%, the residual polymer after dry etching cannot be effectively removed.

[0032] Among them, the alkanolamine is preferably ethanolamine, and the mass percentage content is preferably 5-30%. When the ethanolamine content is lower than 5% or higher than 30%, the residual polymer after dry etching cannot be effectively removed.

[0033] The organosilicon polyether compound is preferably a polyether-siloxane copolymer with a weight average molecular weight below 1000, and the mass percentage content is preferably 0.01-10%. This modified organosilicon polyether has the a...

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Abstract

The invention provides a stripping liquid for removing residual photoresist in the semiconductor technology. The stripping liquid comprises the following components in percentage by weight: 20-70% of multimethyl phosphamide, 5-30% of alkanol amine, 0.01-10% of organosilicon polyether type compounds, 0.01-10% of alkynol, 1-30% (including mass) of hydroxylamine and 5-50% of deinoized water. With the stripping liquid, residual cured photoresist layer in the dry etching technology can be easily and quickly removed. The stripping liquid has good protection action on metallic membrane materials, especially aluminum and aluminiferous wiring materials, so the application prospect is good.

Description

technical field [0001] The invention relates to a cleaning agent, in particular to a stripping solution for removing residual photoresist in semiconductor technology. Background technique [0002] Dry etching is the most important technique for patterning interlayer insulating film materials, wiring materials, etc. in the manufacturing process of semiconductor circuit elements. Dry etching On the substrate of interlayer insulating film material and wiring material, the pattern is obtained by sputtering, CVD, electroplating, spin photoresist, and dry gas etching. On the substrate after dry etching, the photoresist used as a mask and the photoresist degenerated layer formed by the reaction of the photoresist and the etching gas remain, and the exposed areas are exposed due to etching. On the sidewall of the etched material, a sidewall protective deposition film remains. These photoresists, altered layers, and sidewall protection deposition films must be removed from the subs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42H01L21/02H01L21/311
Inventor 卞玉桂顾奇朱海盛
Owner SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
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