Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process for producing silicon nitride ceramic stabilized by rare-earth praseodymium and holmium

A technology of silicon nitride ceramics and production process, applied in the field of ceramic materials, can solve the problems of unfavorable promotion of silicon nitride and high cost of iridium oxide, and achieve the effects of low cost, high density and simple preparation method

Inactive Publication Date: 2012-07-04
苏州中锆新材料科技有限公司
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cost of iridium oxide is relatively high, which is unfavorable for the application and promotion of silicon nitride

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0021] Holmium oxide and praseodymium oxide are Ganzhou Jiarun New Material Co., Ltd., and silicon nitride powder is M11 powder produced by Starck Company of Germany. 3% of holmium oxide, 5% of praseodymium oxide and 92% of silicon nitride powder were respectively weighed according to weight percentage.

[0022] The above two powders were mixed uniformly in a planetary ball mill (QM-3SP2 type of Nanjing University Instrument Factory) at a speed of 300 rpm for 1.5 hours. The mixed powder was molded under a pressure of 80 MPa, and the green body was kept at 1450° C. for 16 hours in a vacuum carbon tube furnace (ZT-40-20 type from Shanghai Chenrong Electric Furnace Co., Ltd.).

[0023] The bulk density of the silicon nitride ceramics obtained in this embodiment is 3.62g / cm 3 , The flexural strength is 681Mpa.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of ceramic materials, in particular to a method for producing high-performance silicon nitride (Si3N4) ceramic through pressureless sintering by taking praseodymium oxide and holmium oxide as additives. The ceramic comprises the following components in percentage by mass: 3 to 7 percent of holmium oxide, 5 to 8 percent of praseodymium oxide and 85 to 92 percent of Si3N4. The method for producing the high-performance Si3N4 ceramic through pressureless sintering by taking the praseodymium oxide and the holmium oxide as the additives aims to overcome the shortcomings in the prior art, and can be widely applied to manufacturing of parts used in fields such as chemical industry, machinery, metallurgy, aerospace and the like.

Description

[technical field] [0001] The invention relates to the technical field of ceramic materials, in particular to a method for producing high-performance silicon nitride ceramics through pressureless sintering of holmium oxide and praseodymium oxide as an additive. [Background technique] [0002] Silicon nitride ceramics have excellent high-temperature mechanical properties and are recognized as one of the most promising high-temperature structural ceramic materials. As a covalently bonded compound, silicon nitride has a small diffusion coefficient and no melting point. It decomposes into ammonia and silicon at about 2173K, making it difficult to sinter. Common silicon nitride ceramics have reaction sintering and hot pressing sintering. Reaction sintering has poor density and poor mechanical properties. Although hot pressing sintering has high density and good mechanical properties, it is expensive and difficult to produce on a large scale. The pressureless sintering is between ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/584C04B35/63C04B35/622
Inventor 陈海
Owner 苏州中锆新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products