Thin film transistor and active matrix rear panel as well as manufacturing methods thereof and display

Abstract

The invention discloses a thin film transistor and an active matrix rear panel as well as manufacturing methods thereof and a display. The manufacturing method of the thin film transistor comprises a flow of preparing a first thin film transistor and a second thin film transistor, wherein the flow of simultaneously preparing a first active layer and a second active layer comprises the following steps of: forming an amorphous silicon active layer thin film and forming patterns including the first active layer and the second active layer through a pattern forming process; coating photoresist and forming a contact through hole above a partial region of the second active layer through an exposure and development process; forming an inductive metal thin film on the photoresist for forming the pattern and carrying out heat treatment; and then inducing the second active layer by the inductive metal thin film at the contact through hole to be subjected to transverse metal inductive crystallization, so as to crystallize an amorphous silicon material to a low-temperature polycrystalline silicon material; and stripping the photoresist and the inductive metal thin film on the photoresist. According to the invention, through a transverse metal inductive crystallization process, the active layers of the amorphous silicon TFT (Thin Film Transistor) and the low-temperature polycrystalline silicon TFT can be prepared on the same layer at the same time.

Description

technical field [0001] The invention relates to an organic light emitting diode display technology, in particular to a thin film transistor, an active matrix backplane, a manufacturing method thereof and a display. Background technique [0002] Active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode, referred to as AMOLED) display has active light, high luminous efficiency, high contrast, high resolution, low power consumption, wide color gamut, light, thin, no viewing angle restrictions, and Rich luminescent materials, easy to achieve color display; fast response, high quality dynamic picture; wide temperature range, strong shock resistance; flexible display can be realized; huge space for cost reduction and many other advantages. Therefore, AMOLED has great potential in the current world flat panel display industry. AMOLED display technology has developed rapidly in the past ten years and has achieved major breakthroughs. One of the ways to...

AI Technical Summary

Problems solved by technology

[0006] When AMOLED uses polysilicon TFT as the TFT of the pixel driving circuit, the defects are: high manufacturing cost of laser annealing; poor mobility uniformity caused by polysilicon grain size; low production yield

This pixel drive circuit uses an additional selection signal line to control the isolation TFT, which increases the complexity of the pixel drive circuit design and array design, and may reduce the yield

The low-temperature polysilicon TFT produced by laser annealing and crystallization has relatively poor threshold voltage and mobility uniformity, so a 4T1C pixel drive circuit must be used, which is not conducive to the production of high-resolution displays for bottom-emission AMOLED displays.

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