Polishing solution used for amorphous alloy and polishing method of amorphous alloy
An amorphous alloy, polishing liquid technology, applied in polishing compositions, chemical instruments and methods, etc., can solve the problems of poor polishing effect, difficult to achieve mirror polishing effect, low polishing efficiency, etc., achieve smooth surface, reduce physical harm and Environmental hazards, high polishing efficiency
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Embodiment 1
[0044] Embodiment 1 is used for illustrating the polishing method of the amorphous alloy workpiece of the present invention and the polishing liquid that adopts thereof;
[0045] Step 1, pre-treatment: 1) mechanical polishing: the size is 150 × 50 mm 2 The amorphous alloy workpiece is mechanically polished, first with a coarse cloth wheel for rough polishing, then with a wind wheel for semi-fine polishing, and finally with a white cloth wheel for fine polishing, so that the surface roughness of the amorphous alloy workpiece is 0.08-0.15 microns; 2 ) Ultrasonic degreasing: 20g / L Na 2 CO 3 with 25g / L Na 3 (PO 3 ) 2 1000mL of the mixed solution was heated to 40°C; the amorphous alloy workpiece was ultrasonically cleaned in the above solution for 5 minutes, taken out, and cooled to room temperature; 3) Washing: soak the amorphous alloy workpiece in pure water for 1 minute;
[0046] Step 2, plasma polishing:
[0047] 1) Preparation of polishing liquid: prepare 1L of polishing...
Embodiment 2
[0055] The difference between embodiment 2 and embodiment 1 is that the content and polishing conditions of each component in the polishing solution in the plasma polishing step are different: wherein,
[0056] 1) In the polishing liquid, the content of each component is:
[0057] Sodium sulfate: 12g / L Ammonium sulfate: 15g / L Ammonium bifluoride: 1g / L
[0058] Cerium sulfate: 30ppm Organic phosphonic acid: 2g / L Benzotriazole: 1g / L Sodium citrate: 20g / L
[0059] Sodium sulfosuccinate: 1mL / L Sodium ethylhexylsulfonate: 3ml / L
[0060] 2) The conditions for plasma polishing are: set the pulse working voltage to 340V, pulse frequency to 12KHz, duty cycle to 10%, operating temperature to 80°C, and polish for 4 minutes;
[0061] Amorphous alloy piece A2 was obtained after plasma polishing.
Embodiment 3
[0063] The difference between Example 3 and Example 1 is that the content of cerium sulfate in the polishing liquid is 15 ppm, and the amorphous alloy piece A3 is obtained after plasma polishing.
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