N-type silicon-on-insulator transverse double-diffusion field effect transistor
A field effect transistor, lateral double diffusion technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of limited buried oxygen layer voltage, easy deviation, increased self-heating effect of devices, etc., to reduce the impact ionization rate and improve reliability. performance, the effect of improving the output characteristic curve
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[0021] Attached below figure 2 , the present invention is described in detail, an N-type silicon-on-insulator lateral double-diffused field effect transistor, comprising: an N-type substrate 1, a buried oxygen 2 is arranged on the N-type substrate 1, and a N-type substrate is arranged on the buried oxygen 2. Type epitaxial layer 3 is provided with N-type buffer well 4 and P-type body region 14 in the inside of N-type epitaxial layer 3, is provided with N-type positive region 5 in N-type buffer well 4, is provided with in P-type body region 14 N-type negative region 13 and P-type body contact region 12 are arranged, gate oxide layer 10 and field oxide layer 8 are arranged on the surface of N-type epitaxial layer 3 and one end of gate oxide layer 10 and one end of field oxide layer 8 are offset, so The other end of the gate oxide layer 10 extends toward the N-type cathode region 13 and ends at the N-type cathode region 13, and the other end of the field oxide layer 8 extends tow...
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