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Coupling waveguide, manufacture method thereof and semiconductor photoelectronic device applying coupling waveguide

A technology for optoelectronic devices and coupling waveguides, applied in the structure of optical waveguide semiconductors, optical waveguides and optical components, etc., can solve problems such as disadvantage, small driving voltage, weak light absorption at the back end of the waveguide, etc., to improve absorption efficiency, prevent The effect of increasing the driving voltage and preventing excessive photo-generated carriers

Active Publication Date: 2012-04-18
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the back end of the waveguide, due to the effect of light absorption, the optical density of the active area is much smaller than that of the input end, resulting in very weak light absorption at the back end of the waveguide, which is not conducive to realizing a small driving voltage.

Method used

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  • Coupling waveguide, manufacture method thereof and semiconductor photoelectronic device applying coupling waveguide
  • Coupling waveguide, manufacture method thereof and semiconductor photoelectronic device applying coupling waveguide
  • Coupling waveguide, manufacture method thereof and semiconductor photoelectronic device applying coupling waveguide

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Embodiment 1

[0034] like figure 1 As shown, the coupling waveguide of this embodiment includes substrates 1 distributed sequentially from bottom to top (substrate 1 is in figure 1 not shown in), the lower waveguide cladding layer 2, the first waveguide core layer 3, the isolation layer 4, the second waveguide core layer 5 and the upper waveguide cladding layer 6, the first waveguide core layer 3 is an active waveguide layer, The second waveguide core layer 5 is a coupling and guiding waveguide layer, the second waveguide core layer 5 has a width gradient section whose lateral width gradually changes along the light guiding direction, and the upper waveguide cladding layer 6 covers the second waveguide core layer 5. The top and sides of the waveguide core layer 5.

[0035] In this embodiment, the lateral width of the width gradient section of the second waveguide core layer 5 first gradually becomes wider and then gradually narrows along the light guiding direction. In other embodiments o...

Embodiment 2

[0039] A method of manufacturing the above coupling waveguide, comprising the following steps:

[0040] S1: Epitaxial growth of the lower waveguide cladding layer 2, the first waveguide core layer 3, the isolation layer 4 and the second waveguide core layer 5 in sequence on a clean epitaxial wafer;

[0041] S2: Processing the second waveguide core layer 5 to form a width gradient section whose lateral width changes along the light guiding direction;

[0042] S3: performing secondary epitaxy to form an upper waveguide cladding layer 6 covering the upper side and side surfaces of the second waveguide core layer 5 .

[0043] In this embodiment, the step of processing the second waveguide core layer 5 includes using electron beam exposure to make a mask on the second waveguide core layer 5, and then performing dry etching first and then wet etching The process of the second waveguide core layer 5. In other embodiments, other methods may also be used to change the lateral width o...

Embodiment 3

[0046] like figure 1 As shown, a semiconductor optoelectronic device having the coupling waveguide described in Embodiment 1, the semiconductor optoelectronic device includes an electro-absorption modulator EAM, and the second waveguide core layer 5 of the coupling waveguide corresponds to the electro-absorption modulator EAM The lateral width of the portion is gradually narrowed along the light guiding direction.

[0047] The semiconductor optoelectronic device also includes a semiconductor optical amplifier SOA sharing the same coupling waveguide with the electro-absorption modulator EAM, and the second waveguide core layer 5 of the coupling waveguide is along the guideway along the lateral width of the corresponding part of the semiconductor optical amplifier SOA. The light direction gradually widens.

[0048] The semiconductor optical amplifier SOA and the electro-absorption modulator EAM are successively arranged adjacent to each other along the light guiding direction, ...

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Abstract

The invention discloses a coupling waveguide, a manufacture method thereof and a semiconductor photoelectronic device applying the coupling waveguide. The coupling waveguide comprises a substrate, a lower waveguide cladding, a first waveguide core layer, an isolating layer, a second waveguide core layer and an upper waveguide cladding, wherein the second waveguide core layer is provided with a width transition section of which the transverse width is gradually changed along a light guide direction. The manufacture method of the coupling waveguide comprises the following steps of: S1. carrying out primary epitaxy for growing the lower waveguide cladding, the first waveguide core layer, the isolating layer and the second waveguide core layer in order; S2. processing the second waveguide core layer to form the width transition section; and S3. carrying out secondary epitaxy for forming the upper waveguide cladding. The semiconductor photoelectronic device comprises an electroabsorption modulator or a photodetector; and the transverse widths of the corresponding parts of the second waveguide core layer of the coupling waveguide and the electroabsorption modulator or the photodetector are gradually narrowed along the light guide direction. The distribution of all transverse light fields of the coupling waveguide can be adjusted according to the requirement, and thereby the distribution of a light limiting factor of the device is optimized.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a coupling waveguide, a manufacturing method thereof and a semiconductor optoelectronic device using the same. Background technique [0002] Microwave links have important applications in communications, signal processing, and radar. However, as the microwave frequency increases, the loss of microwave RF signals in cables and waveguides increases rapidly, especially in the millimeter wave band. [0003] Microwave optical fiber links use microwave signals to modulate light intensity, and transmit or distribute to optical receivers through optical fibers, and restore microwave signals through optical receivers. From the perspective of both ends of the link, the microwave optical fiber link is completely equivalent to the microwave link, and because the optical loss of the optical fiber is very small, the transmission distance of the high frequency microwave signal i...

Claims

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Application Information

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IPC IPC(8): G02B6/122G02B6/13H01S5/22
Inventor 熊兵朱军浩赵湘楠孙长征罗毅
Owner TSINGHUA UNIV
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