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Coupling waveguide, manufacture method thereof and semiconductor photoelectronic device applying coupling waveguide

A technology of optoelectronic devices and coupling waveguides, applied in the structure of optical waveguide semiconductors, optical waveguides, optical components, etc., can solve the problems of weak light absorption, small driving voltage, and disadvantages at the back end of waveguides, and prevent photogenerated carriers Excessive, the effect of preventing the drive voltage from increasing and improving the absorption efficiency

Active Publication Date: 2014-09-03
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the back end of the waveguide, due to the effect of light absorption, the optical density of the active area is much smaller than that of the input end, resulting in very weak light absorption at the back end of the waveguide, which is not conducive to realizing a small driving voltage.

Method used

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  • Coupling waveguide, manufacture method thereof and semiconductor photoelectronic device applying coupling waveguide
  • Coupling waveguide, manufacture method thereof and semiconductor photoelectronic device applying coupling waveguide

Examples

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Embodiment 1

[0034] Such as figure 1 As shown, the coupled waveguide of this embodiment includes a substrate 1 distributed in order from bottom to top (the substrate 1 is figure 1 Not shown), the lower waveguide cladding layer 2, the first waveguide core layer 3, the isolation layer 4, the second waveguide core layer 5 and the upper waveguide cladding layer 6, the first waveguide core layer 3 is an active waveguide layer, The second waveguide core layer 5 is a coupling guiding waveguide layer, the second waveguide core layer 5 has a width gradient section with a lateral width gradually changing along the light guiding direction, and the upper waveguide cladding layer 6 covers the second waveguide layer. The top and side of the waveguide core 5.

[0035] In this embodiment, the lateral width of the tapered width section of the second waveguide core layer 5 first gradually widens and then gradually narrows along the light guiding direction. In other embodiments of the present invention, accordi...

Embodiment 2

[0039] A method for manufacturing the above-mentioned coupled waveguide includes the following steps:

[0040] S1: The lower waveguide cladding layer 2, the first waveguide core layer 3, the isolation layer 4, and the second waveguide core layer 5 are sequentially grown on a clean epitaxial wafer at one time;

[0041] S2: processing the second waveguide core layer 5 to form a gradual width section whose lateral width changes along the light guiding direction;

[0042] S3: Perform secondary epitaxy to form an upper waveguide cladding layer 6 covering the upper and side surfaces of the second waveguide core layer 5.

[0043] In this embodiment, the step of processing the second waveguide core layer 5 includes using electron beam exposure to make a mask on the second waveguide core layer 5, and then dry etching first, and then wet etching. The process of the second waveguide core 5. In other embodiments, other methods may be used to change the lateral width of the second waveguide core ...

Embodiment 3

[0046] Such as figure 1 As shown, a semiconductor optoelectronic device having the coupled waveguide described in Embodiment 1, the semiconductor optoelectronic device includes an electro-absorption modulator EAM, and the second waveguide core layer 5 of the coupled waveguide corresponds to the electro-absorption modulator EAM The lateral width of the part gradually narrows along the light guide direction.

[0047] The semiconductor optoelectronic device also includes a semiconductor optical amplifier SOA that shares the same coupling waveguide with the electro-absorption modulator EAM. The second waveguide core layer 5 of the coupling waveguide and the corresponding portion of the semiconductor optical amplifier SOA have a lateral width along the guide The light direction gradually widens.

[0048] The semiconductor optical amplifier SOA and the electro-absorption modulator EAM are arranged adjacent to each other along the light guiding direction, and the lateral width of the seco...

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Abstract

The invention discloses a coupling waveguide, a manufacture method thereof and a semiconductor photoelectronic device applying the coupling waveguide. The coupling waveguide comprises a substrate, a lower waveguide cladding, a first waveguide core layer, an isolating layer, a second waveguide core layer and an upper waveguide cladding, wherein the second waveguide core layer is provided with a width transition section of which the transverse width is gradually changed along a light guide direction. The manufacture method of the coupling waveguide comprises the following steps of: S1. carrying out primary epitaxy for growing the lower waveguide cladding, the first waveguide core layer, the isolating layer and the second waveguide core layer in order; S2. processing the second waveguide core layer to form the width transition section; and S3. carrying out secondary epitaxy for forming the upper waveguide cladding. The semiconductor photoelectronic device comprises an electroabsorption modulator or a photodetector; and the transverse widths of the corresponding parts of the second waveguide core layer of the coupling waveguide and the electroabsorption modulator or the photodetector are gradually narrowed along the light guide direction. The distribution of all transverse light fields of the coupling waveguide can be adjusted according to the requirement, and thereby the distribution of a light limiting factor of the device is optimized.

Description

Technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a coupling waveguide, a manufacturing method thereof, and a semiconductor optoelectronic device using the same. Background technique [0002] Microwave links have important applications in communications, signal processing, and radar. However, with the increase of microwave frequency, the loss of microwave radio frequency signals in cables and waveguides increases rapidly, especially in the millimeter wave band. [0003] Microwave fiber links use microwave signals to modulate light intensity, and transmit or distribute them to optical receivers through optical fibers, and restore microwave signals through optical receivers. From both ends of the link, the microwave optical fiber link is completely equivalent to the microwave link, and because the optical loss of the optical fiber is very small, the transmission distance of high-frequency microwave signals is greatly incr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/122G02B6/13H01S5/22
Inventor 熊兵朱军浩赵湘楠孙长征罗毅
Owner TSINGHUA UNIV
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