F-P (Fabry-Perot) cavity strained quantum well laser with low linewidth

Abstract

The invention provides an F-P (Fabry-Perot) cavity strained quantum well laser with low linewidth. The F-P cavity strained quantum well laser comprises a substrate (1), a buffer layer (2), an n type lower limiting layer (3), a lower waveguide layer (4), a lower barrier layer (5), an active layer (6), an upper barrier layer (7), an upper waveguide layer (8), a p type upper limiting layer (9) and an ohmic contact layer (10) which are sequentially connected. Through the optimal design of the active layer (6), a linewidth enhancement factor generated by interband transition of a quantum well and a linewidth enhancement factor generated by free carrier absorption and band-gap shrinkage can offset mutually, thereby realizing the low linewidth and improving the quality of a light beam of the quantum well laser. The active layer of the laser provided by the invention is made of InxGa1-xAs materials, wherein x is equal to 0.33, the width thickness of the well is 3-5nm, the center wavelength lambda is equal to 980nm-1036nm, and the linewidth of the F-P cavity strained quantum well laser can be reduced by three orders of magnitude in comparison with a quantum well laser. The F-P cavity strained quantum well laser can be used for optical measurement, solid-state laser pumping, laser spectroscopy research and other fields.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to F-P cavity strained quantum well lasers with low line width. Background technique [0002] Semiconductor lasers are widely used in solid-state laser pumping and military applications due to their small size and light weight. Quantum well laser is a new type of semiconductor laser developed in recent years. Since the thickness of the active layer is smaller than the mean free path of electrons, the carriers can only move in the active layer, which improves the conversion efficiency of the laser. The linewidth enhancement factor (Linewidth Enhancement Factor, αfactor) is an important factor affecting the spectral linewidth of semiconductor lasers. It not only directly affects the spectral linewidth of the semiconductor laser, but also affects the mode stability of the laser, the chirp under current modulation, the injection locking range, the optical amplification factor, and ...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problems existing in the line width of the existing F-P cavity strained quantum well laser, the invention provides a low line width F-P cavity strained quantum well laser

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