Method for manufacturing damascene structure

Abstract

The invention discloses a method for manufacturing a damascene structure, which comprises the following steps of: forming a first dielectric layer on a semiconductor substrate; forming a metal conducting wire groove and a redundant metal groove in the first dielectric layer, wherein the metal conducting wire groove is exposed out of the semiconductor substrate; forming metal layers in the metal conducting wire groove and the redundant metal groove and on the first dielectric layer; removing the metal layer on the first dielectric layer by a chemical mechanical polishing process, and forming a metal conducting wire in the metal conducting wire groove and a redundant metal wire in the redundant metal groove; forming a graphical hard mask layer on the first dielectric layer, wherein the graphical hard mask layer is exposed out of the redundant metal wire; etching to remove the redundant metal wire by using the graphical hard mask layer as a mask so as to expose the redundant metal groove; and filling a second dielectric layer in the redundant metal groove from which the redundant metal wire is removed. By the method for manufacturing the damascene structure, coupling capacitance between the redundant metal wire and the redundant metal wire, and between the redundant metal wire and the metal conducting wire can be removed.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for manufacturing a damascene structure. Background technique [0002] As the integration level of semiconductor chips continues to increase, the feature size of transistors continues to shrink. After entering the 130nm technology node, limited by the high resistance characteristics of aluminum, copper interconnection gradually replaces aluminum interconnection and becomes the mainstream of metal interconnection. Since the copper dry etching process is not easy to realize, the manufacturing method of the copper wire cannot be obtained by etching the metal layer like the aluminum wire. The widely used manufacturing method of copper wire is the inlay technology of Damascus process. The process includes a single damascene process for making only metal wires and a double damascene process for making contact holes and metal wires at the same time. [0003] S...

AI Technical Summary

Problems solved by technology

After chemical mechanical polishing, the redundant metal wire 122 has no effect, and a coupling capacitance will be generated between the redundant metal wire 122 and the redundant metal wire 122 and between the redundant metal wire 122 and the metal wire 121, and the coupling Capacitance will affect the electrical performance of the metal wire 121, for example, the coupling capacitance will affect the speed of the current passing through the metal wire 121, thereby affecting the speed of the chips interconnected by the metal wire 121

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