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Production method of titanium-based boron-doping diamond coating electrode

A boron-doped diamond, coating electrode technology, applied in metal material coating process, electrode, coating and other directions, can solve the problem of corrosion resistance, easy passivation, poor bonding performance between boron-doped diamond coating and substrate, easy to fall off, cost Low cost, to achieve the effect of cost saving, excellent bonding performance of film base and low cost

Inactive Publication Date: 2011-11-16
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the bonding performance of the boron-doped diamond coating and the substrate is poor and easy to fall off when using titanium as an electrode, and to invent a method for improving the bonding force of the boron-doped diamond coating and the titanium substrate by adding a transition layer. The preparation method of titanium-based boron-doped diamond coating electrode, which makes full use of the good mechanical properties of titanium, the characteristics of corrosion resistance, easy passivation and low cost; the magnetron sputtering technology is mature, and the bonding performance between the substrate and the transition layer is excellent ; At the same time, the niobium or tantalum transition layer is used to improve the bonding performance of the coating

Method used

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  • Production method of titanium-based boron-doping diamond coating electrode
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  • Production method of titanium-based boron-doping diamond coating electrode

Examples

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preparation example Construction

[0029] A method for preparing a titanium-based boron-doped diamond coated electrode, comprising the following steps:

[0030] First, use diamond sandpaper with a particle size of 40 microns and 10 microns to polish the surface of the pure titanium plate as the base material 1 for 5-10 minutes respectively;

[0031] Secondly, the polished pure titanium plate is ultrasonically cleaned in alcohol for 2-3 times for 10 minutes each time to complete the sputtering pretreatment of the dull titanium plate;

[0032] Third, place the blunt titanium plate pretreated by sputtering in a sputtering device for sputtering, and form a sputtering transition layer 2 with a thickness of 100-500 nanometers on the surface of the blunt titanium plate; DC magnetron sputtering is used during sputtering sputtering technology, the sputtering target is niobium or tantalum, the magnetron sputtering parameters are: current 0.5~1.5A, voltage 100~140V, background vacuum 0.001~0.01Pa, working gas is argon, ga...

Embodiment 1

[0040]Grind the titanium plate with W40 and W10 sandpaper for 5~10min respectively, and ultrasonically clean it with alcohol for 10min, twice. A tantalum transition layer of 400 nm was sputtered on titanium by DC magnetron sputtering. The sputtering parameters were the substrate temperature of 400 °C, the current of 1.2 A, the voltage of 110 V, the background vacuum of 0.005 Pa, the working gas of argon, and the pressure of 1.5 Pa. . The samples obtained by sputtering were pickled in 5 mol / L HCl solution, the temperature of the constant temperature water bath was set at 70-90 ℃ for 30 minutes, and then ultrasonically cleaned in the alcohol suspension prepared by W0.5 and W0.2 diamond mixed powder 30min for pretreatment, seeding, and then ultrasonic cleaning with alcohol for 2-3 minutes, 2-4 minutes each time. The BDD coating was deposited on the transition layer by HFCVD. The deposition parameters were the distance from the hot wire to the substrate 6 mm, the hot wire tempera...

example 2

[0045] Grind the titanium plate with W40 and W10 sandpaper for 5~10min respectively, and ultrasonically clean it with alcohol for 10min, 3 times. A 100nm niobium transition layer was sputtered on titanium by DC magnetron sputtering. The sputtering parameters were substrate temperature of 600°C, current of 0.5A, voltage of 100V, background vacuum of 0.001Pa, working gas of argon, and pressure of 0.4Pa. . The samples obtained by sputtering were pickled in 10mol / L HCl solution, the temperature of the constant temperature water bath was set at 70-90℃ for 30min, and then ultrasonically cleaned in the alcohol suspension prepared by W0.5 and W0.2 diamond mixed powder After 30min seed crystal pretreatment, ultrasonic cleaning was carried out in alcohol solution 2-3 times for 4 minutes each time. The BDD coating was deposited on the transition layer by HFCVD. The deposition parameters were the distance from the hot wire to the substrate 8m, the hot wire temperature 2500℃, the substrat...

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Abstract

The invention relates to a production method of titanium-based boron-doping diamond coating electrode, the invention is characterized in that the method is realized by sputtering a transition layer on a substrate material and then depositing the boron-doping diamond coating by a CVD method. The electrode is composed of a substrate (1), a transition layer (2) and a diamond layer (3), and is characterized in that the substrate is titanium, the transition layer is niobium or tantalum through magnetron sputtering, and the boron-doping concentration used in the CVD technology is 6000 - 10000 ppm. The invention provides a production method of BDD electrode with long service life and high electrolytic efficiency, and has the advantages of low cost and high repeatability.

Description

technical field [0001] The invention relates to a method for preparing a corrosion-resistant electrode, in particular to a method for manufacturing a boron-doped diamond (BDD) coated electrode with relatively low cost, in particular to a low-cost titanium with pure titanium as a base material Preparation method of base boron-doped diamond coated electrode. Background technique [0002] As we all know, boron doped diamond (BDD) has many excellent properties such as good electrical conductivity, wide potential window, small background current, high electrochemical stability and corrosion resistance. BDD electrodes are used in the field of sewage treatment. with broadly application foreground. [0003] The preparation of BDD coatings with excellent performance involves various technologies such as the selection of substrate materials, boron doping methods, substrate pretreatment schemes, optimization of CVD process parameters, and control of film-substrate adhesion. For indus...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/04C23C16/27C23C16/02C02F1/461
Inventor 徐锋左敦稳郑琳许春卢文壮周春张旭辉
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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