Bridge-driven IPM (intelligent power module) circuit for three-phase electric machine

Abstract

The invention discloses a bridge-driven IPM (intelligent power module) circuit for a three-phase electric machine, comprising gate drive chips, one group of high-pressure side power devices and one group of low-pressure side power devices, wherein the gate drive chips comprise high-pressure side control drive chips and low-pressure side control drive chips; the high-pressure side control drive chips are integrated by a high-pressure side drive module; and the low-pressure side control drive chips are integrated by a low-pressure side drive module, an operational amplifier and a low-pressure voltage-stabilizing circuit. The bridge-driven IPM circuit has the advantages that the high-pressure side control drive chips are produced by adopting a complicated high-pressure isolation manufacturing process, and the area of the high-pressure side control drive chips is smaller, so the production process of the high-pressure side control drive chips is easier to control and beneficial to improving the yield. A common CMOS (complementary metal oxide semiconductor) process is adopted to produce the low-pressure side control drive chips, the process conditions of the CMOS process are simple, the technology of the CMOS process is mature, and the character lines of the CMOS process are thinner, so the chip area is smaller, thus ensuring the production yield effectively and saving the cost.

Description

technical field [0001] The invention relates to a bridge drive circuit, in particular to an intelligent power module circuit used for bridge drive of a three-phase motor. Background technique [0002] The bridge drive circuit is a common application circuit in the field of switching power supplies. The bridge drive circuit generally includes a half-bridge drive circuit, a full-bridge drive circuit and a three-phase bridge drive circuit. Two half-bridge drive circuits can be combined into a full Bridge drive circuit, three half-bridge drive circuits can be combined into a three-phase bridge drive circuit. Among them, the three-phase bridge drive circuit is often used in such three-phase motor products as fans, inverter air conditioners, inverter washing machines, inverter microwave ovens, and automobile motor drives. figure 1 A typical three-phase motor bridge drive intelligent power module circuit is given, and the three-phase motor bridge drive intelligent power module cir...

AI Technical Summary

Problems solved by technology

[0003] In existing applications, the intelligent power module circuit for three-phase motor bridge drive usually adopts the power module integration method to integrate a single gate driver chip, operational amplifier circuit, low-voltage regulator circuit and six power devices into one module. This method, on the one hand, in the manufacture of intelligent power module devices, since the chip area of ​​the six power devices is relatively large, and the power devices generate heat during operation, the distance between each power device is often required to be large during assembly. However, the area of ​​the gate drive chip is often small, so the connection between the gate drive chip and each power device will be very long, which will greatly reduce the reliability of the intelligent power module circuit, which is not conducive to production and reliability control; On the one hand, when manufacturing gate drive chips, it is necessary to integrate the high-voltage isolation manufacturing process into the ordinary CMOS process for production. The purpose of using the high-voltage isolation manufacturing process is to isolate the high-voltage side driver module from the low-voltage side driver module. The CMOS process integrated high-voltage isolation manufacturing process is complicated. In order to withstand high voltage, the process can achieve a large feature size. The part that originally only needs a small feature size must also use a large feature size, so that the feature size of the manufactured gate drive chip Larger, resulting in the gate drive chip with the same function occupying too much area, and increasing the production cost of a single gate drive chip; It is not conducive to the design of chips with complex functions, such as integrating operational amplifier circuits, low-voltage regulator circuits, etc., because the area of ​​chips with complex functions will be larger when using this gate driver chip, and the production yield will also be reduced. , the production cost will also increase

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