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Method for passivating P-type doping layer of N-type silicon solar cell and cell structure

A technology of silicon solar cells and doped layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as complex processes, high costs, and unsuitability for large-scale industrial production

Active Publication Date: 2011-08-31
TRINA SOLAR CO LTD
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Problems solved by technology

However, the above-mentioned passivation method is complicated in process and high in cost, and is not suitable for large-scale industrial production.

Method used

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  • Method for passivating P-type doping layer of N-type silicon solar cell and cell structure
  • Method for passivating P-type doping layer of N-type silicon solar cell and cell structure

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Embodiment Construction

[0034] A method for passivating a P-type doping layer of an N-type silicon solar cell, wherein a floating junction is formed on the emitter of a non-metallic grid line region of a P-type emitter junction on the backside of an N-type Czochralski monocrystalline silicon substrate through a phosphorus diffusion layer, The floating junction and the back metal gate line are separated by a dielectric film, and the surface of the floating junction is used as a passivation film.

[0035] The specific implementation steps are as follows:

[0036] a) The silicon wafer is cleaned, the damaged layer is removed, the surface is alkali-textured, and the reflectivity is 7%;

[0037] b) The boron source diffuses to form a P-type emitter junction with a square resistance of 40ohm / sq;

[0038] c) The acid etching solution corrodes the P-type emitter junction on the front side to form a single-sided P-type emitter junction;

[0039] d) 5% HF acid to remove BSG borosilicate glass;

[0040] e) T...

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Abstract

The invention relates to a method for passivating a P-type doping layer of an N-type silicon solar cell and a cell structure. An emitter of a non-metal contact region of a P-type emitter junction at the back of an N-type czochralski silicon matrix forms a floating junction through a phosphorus diffusion layer, the floating junction is isolated from a back metal grid line through a dielectric film, and a passivating film is formed on the surface of the floating junction. An N-type front surface field is formed on the front of the matrix, a pyramid suede structure is formed on the front of the N-type front surface field, a SiNx layer with a passivating N-type surface field is arranged on the surface of the N-type front surface, and metal grid lines are arranged on the front and the back of a battery cell. A boron-doped layer is passivated by using the floating junction, and needs not to be subjected to production line reconstruction compared with a mode of passivating by using Al2O3, thus the method is suitable for massive industrialized production and has an efficiency reaching 19 percent proved by tests.

Description

technical field [0001] The invention relates to a method for passivating a P-type doped layer of an N-type silicon solar cell and a cell structure. Background technique [0002] Compared with P-type single crystal, N-type single crystal has the characteristics of less loss of light efficiency, more resistance to metal impurity pollution, and longer diffusion length of minority carriers. The current high-efficiency batteries are all completed on the substrate of N-type single crystal. [0003] To realize the advantages of N-type single crystal materials, an effective passivation method is the key to realize high-efficiency cells. It is well known that the passivation layer (SiNx, SiO2) of the ordinary N-type layer has no obvious passivation effect on the P-type layer. In recent years, some institutions have studied other passivation layers for P-type layers, such as a-Si:H, Al2O3, etc. Among them, the efficiency of N-type single crystal cell with Al2O3 passivation P-type l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352H01L31/04H01L31/068
CPCY02E10/50Y02E10/547Y02P70/50
Inventor 陈艳
Owner TRINA SOLAR CO LTD
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