Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules

A high-power, converter technology, applied in the direction of converting AC power input to AC power output, output power conversion device, conversion equipment for intermediate conversion to DC conversion, etc., can solve the problem that cannot meet the application of high-power converter and other problems, to achieve the effect of symmetrical circuit structure, small loop stray inductance, and good current sharing effect.

Active Publication Date: 2011-08-24
CHINA EPRI SCIENCE & TECHNOLOGY CO LTD +2
View PDF6 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solve the problem that the capacity of a single IGBT module cannot meet the application of high-power converters, and the current sharing of parallel IGBT modules

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules
  • High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules
  • High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] Basic high-power converters can be divided into two types of topologies, current source and voltage source, according to the nature of the DC bus.

[0032]The high-power converter includes an AC-DC busbar 8, a liquid-cooled radiator 9, and an energy-taking power supply 1, a DC capacitor 2, an H-bridge circuit 3, a drive circuit 4, a discharge circuit 5, a bypass circuit 6 and a unit controller. 7, the liquid cooling radiator 9 is placed on the top of the frame, the AC and DC busbar 8 is located above the liquid cooling radiator 9, and the AC and DC busbar 8 and the liquid cooling radiator 9 are provided with The H-bridge circuit 3, the AC-DC busbar 8 connect the H-bridge circuit with the DC capacitor 2 placed on the side of the frame, the drive circuit 4 is located between the H-bridge circuit 3 and the AC-DC busbar 8, the energy-taking power supply 1, the discharge circuit 5. The bypass circuit 6 and the unit controller 7 are placed under the liquid cooling radiator 9 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention particularly relates to a high-power converter based on parallel IGBT (insulated gate bipolar transistor) modules, belonging to the technical field of power electronic. Metal-film capacitors of the high-power converter adopt the high-power converter structure of a heteropolarity manner; and the polarities of the capacitors are staggered with each other. The high-power converter is featured with symmetrical circuit structure, good module current equalizing effect and low loop stray inductance so that the high-power converter is convenient for cascading chain joint modules so as to realize large power application. According to the invention, the problems that the capacity of the single IGBT module cannot meet the requirements of the high-power converter, and the current equalization of the parallel IGBT modules are solved.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a high-power converter based on parallel connection of IGBT modules. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has a MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. IGBT combines the advantages of the above two devices, the driving power is small and the saturation voltage is low, its frequency characteristics are between MOSFET and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02M5/44H02M5/458H02M1/32H05K7/20
Inventor 王轩王柯袁蒙杨武帝韩天绪赵瑞斌王清涛武守远傅坚袁聪波林嘉扬
Owner CHINA EPRI SCIENCE & TECHNOLOGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com