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ZnSe nano-photoelectric detector and preparation method thereof

A photodetector and nanotechnology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem that the area of ​​the switch is smaller than that of the photosensitive layer, and achieve the effects of improving contact, increasing concentration, and increasing electrical signals

Inactive Publication Date: 2011-08-24
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This makes ZnSe nano photodetectors have problems of electrical signal, switching ratio and small area of ​​photosensitive layer

Method used

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  • ZnSe nano-photoelectric detector and preparation method thereof
  • ZnSe nano-photoelectric detector and preparation method thereof
  • ZnSe nano-photoelectric detector and preparation method thereof

Examples

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Embodiment 1

[0029] Embodiment 1: This embodiment is prepared according to the following steps

[0030] 1. Use acetone, alcohol, and pure water in sequence to treat SiO on the surface 2 The Si substrate of the first layer was ultrasonically treated for 15 minutes, and then dried with nitrogen gas with a purity not lower than 99%;

[0031] 2. According to the atomic ratio of 1%, mix and grind the doping material I with a purity of not less than 99.9% and ZnSe powder with a purity of 99.9% for 30 minutes to obtain the raw material, weigh 0.5g of the raw material and put it into Al with a purity of 99.9% 2 o 3 In the porcelain boat, place the porcelain boat in the center of the horizontal tube furnace; place a steamed gold silicon wafer 10cm away from the small porcelain boat downstream of the carrier gas. The thickness of the gold film on the evaporated gold silicon wafer is 15nm. The background vacuum in the horizontal tube furnace was evacuated to 10 by mechanical pump and molecular pum...

Embodiment 2

[0036] with SiO on the surface 2 Layer Si sheet is as substrate, and doping element is I, and doping concentration is 25%, adopts the preparation method identical with embodiment 1, sees in the photoresponse spectrum of ZnSe nanometer photodetector through the preparation gained. Figure 5 .

Embodiment 3

[0038] with SiO on the surface 2Layer Si sheet is as substrate, and doping element is I, and doping concentration is 50%, adopts the preparation mode identical with embodiment 1, sees in the photoresponse spectrum of ZnSe nanometer photodetector through the preparation gained. Image 6 .

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Abstract

The invention discloses a ZnSe nano-photoelectric detector and a preparation method thereof, an insulating substrate, a photosensitive layer and an electrode are sequentially arranged on a structural layer of the detector from bottom to top, and the ZnSe nano-photoelectric detector is characterized in that the photosensitive layer comprises n type doped ZnSe nanowires. The preparation method comprises the following steps: adopting the chemical vapor deposition method for synthesizing and preparing the n type doped ZnSe nanowires, realizing n type doping through in-situ doping during the synthesis process, utilizing the technologies including photoetching, electron bean and pulsed laser deposition for preparing source and drain electrodes and further preparing the ZnSe nano-photoelectric detector. The n type doped ZnSe nanowires are adopted in the photosensitive layer in the detector, thereby effectively enhancing electrical signals of the nano-photoelectric detector and improving the switching ratio; furthermore, the preparation method is simple, and the ZnSe nanowires can be arranged in parallel, thereby increasing the photosensitive area and further improving the electrical signals.

Description

technical field [0001] The invention relates to a ZnSe nanometer photodetector and a preparation method thereof, more specifically a detector sensitive to visible light, especially blue-green light. Background technique [0002] Photodetection devices can convert the sensed light signal into electrical signal, which has important military value and broad civilian market. The structural layers of a photodetector device are an insulating substrate, a photosensitive layer, and an electrode from bottom to top. Nanophotodetectors are photodetectors that use nanomaterials as the photosensitive layer, which has the characteristics of easy integration, low power consumption, and low cost. More importantly, nano photodetectors have higher sensitivity and response speed than thin film photodetectors of the same material. ZnSe is an important II-VI semiconductor material with a band gap of ~2.7eV (~460nm) at room temperature and is very sensitive to blue-green light. Existing ZnSe n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/0328H01L31/0352H01L31/18
CPCY02P70/50
Inventor 王莉揭建胜吴春艳于永强卢敏谢超郭慧尔任勇斌
Owner HEFEI UNIV OF TECH
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