Chip type high polymer electrostatic discharge protecting element and manufacturing method thereof

Abstract

The invention provides a chip type high polymer electrostatic discharge protecting element. Inner electrodes are one of two inner electrodes opposite to each other in a length direction and two inner electrodes staggered with each other in the length direction; and a core material is one of a core material filled in a gap between the two inner electrodes opposite to each other in the length direction, a core material filled in a gap between the two inner electrodes staggered with each other in the length direction, and a core material filled in a through hole in the gap between the two inner electrodes opposite to each other in the length direction. The manufacturing method sequentially comprises the following steps: (1) the preparation of slurry of the core material; (2) the preparation of a lower substrate; (3) the preparation of the inner electrodes; (4) the preparation of the core material; (5) the preparation of an upper substrate; (6) cutting of a chip; (7) the preparation of terminal electrodes; and (8) electroplating. A chip type ESD (Electrostatic Discharge) protecting device which has small size and very small effective capacitance can be manufactured; the requirements of high-speed signal transmission equipment on the ESD protection can be sufficiently met; the inner electrodes and the terminal electrodes are easier to connect, and the terminal electrodes are easier to lead out, therefore, the chip type high polymer electrostatic discharge protecting element is easy to manufacture; moreover; and the gap between the inner electrodes can be correspondingly adjusted according to the value of a trigger voltage in the design.

Description

technical field [0001] The present invention relates to electrostatic discharge (Electrostatic Discharge, abbreviated as ESD) protection, in particular to a patch type polymer ESD protection element and a manufacturing method thereof. Background technique [0002] In the signal transmission port HDMI, HDMI1.3, USB3.0, IEEE1394B, low-voltage differential signaling (Low-voltage differential signaling, the abbreviation is LVDS), the ESD protection element itself has a certain capacitance, among which the varistor, transient The capacitance of the diode (Transient Voltage Suppressor, abbreviated as TVS) cannot be reduced to a small enough value, resulting in attenuation and distortion of the signal in the high-speed signal transmission line. The effective capacitance of the existing ESD protection components made of polymer pressure-sensitive materials They are very small, and they use inorganic ceramics or copper-clad laminates as the upper and lower substrates, which require h...

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Problems solved by technology

[0002] In the signal transmission port HDMI, HDMI1.3, USB3.0, IEEE1394B, low-voltage differential signaling (Low-voltage differential signaling, the abbreviation is LVDS), the ESD protection element itself has a certain capacitance, among which the varistor, transient The capacitance of the diode (Transient Voltage Suppressor, abbreviated as TVS) cannot be reduced enough to cause signal attenuation and distortion in the high-speed signal transmission line

The effective capacitance of the existing ESD protection components made of polymer pressure-sensitive materials is very small, and they all use inorganic ceramics or copper-clad laminates as the upper and lower substrates, which require high-end cutting equipment and high cost. The lead-out method is more complicated and difficult to manufacture

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