Groove-shaped channel AlGaN/GaN-reinforced high electron mobility transistor (HEMT) component and manufacturing method thereof

Abstract

The invention discloses a groove-shaped channel AlGaN / GaN-reinforced high electron mobility transistor (HEMT) component and a manufacturing method thereof and mainly solves the problem of low reliability caused by a low threshold voltage of the conventional reinforced component and large etching damage in the manufacturing process. The component comprises a substrate, an I-GaN layer, a II-GaN layer, an AlGaN barrier layer, a source, a drain, a medium layer and a grid from the bottom up, wherein a groove (1) is formed in the middle of the I-GaN layer so as to form a two-dimensional electronic gas (2DEG) on the planar interface between the II-GaN and the AlGaN, while the 2DEG cannot be formed on an inclining interface between the II-GaN and the AlGaN. According to different processes, the reinforced component structure can be manufactured into two types of components, namely a metal oxide semiconductor grid and a Schottky grid. The invention has the advantages of high reliability, simple process and good repeatability and can be used in high-temperature, high-frequency and large-power places, large-power switches and digital circuits.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to semiconductor materials and device manufacturing techniques, in particular to a novel AlGaN / GaN enhanced HEMT device structure and manufacturing method, which can be used in high-temperature and high-power applications and constitute digital circuit basic units. Background technique [0002] With the development of modern weaponry and aerospace, nuclear energy, and communication technologies, higher requirements are placed on the performance of semiconductor devices. As a typical representative of wide bandgap semiconductor materials, GaN-based materials have the characteristics of large bandgap width, high electron saturation drift velocity, high breakdown field strength and good thermal conductivity, and can be used to make high-temperature, high-frequency and high-power electronic devices. More importantly, GaN-based materials can form modulation-doped AlGaN / GaN heterost...

AI Technical Summary

Problems solved by technology

[0006] In 2000, Hu et al. used the selective regrowth PN junction gate technology to successfully develop an enhanced mode AlGaN / GaN HEMT device, but its peak transconductance was only 10mS / mm

These technologies still have great shortcomings: first, the threshold voltage is not high, and the highest reported is only 0.9V, which cannot meet the threshold voltage requirements of switching applications; second, whether etching to form grooves or fluorine ion implantation will cause damage to the material , although some damage can be eliminated after annealing, the residual damage will still affect the performance and reliability of the device, and the repeatability of this process is not high; the third is to form short-channel devices for microwave applications. High-end technology such as beam direct writing is used to make short gate lengths, and the process is relatively difficult

Images