Method for manufacturing bipolar junction transistor

Abstract

The invention relates to a method for manufacturing a bipolar junction transistor, which is compatible with a process for preparing a complementary metal oxide semiconductor (CMOS) transistor. In the method, an emitter is formed in a bipolar junction transistor preparation region while gate polycrystalline silicon is formed in a CMOS transistor preparation region; high doping is generally required to be performed on an extrinsic base region in the bipolar junction transistor so as to form good ohmic contact with an electrode; a self-aligned extrinsic base region is realized by means of self-aligned high-doping ion implantation of the CMOS transistor; and doping ions are implanted and propelled to the emitter, so that the doping ions are uniformly propelled to the base region to form an emitter junction, the thickness of the emitter junction is more uniform, and etching damage is repaired by means of a rapid thermal oxidation process of a CMOS polycrystalline silicon gate after a polycrystalline silicon layer is etched; therefore, the boundary effect is reduced and the leakage current is reduced.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a manufacturing method of a bipolar transistor compatible with a CMOS transistor manufacturing process. Background technique [0002] Bipolar Junction Transistor (BJT) is one of the common device structures constituting modern large-scale integrated circuits. It has fast operation speed, small saturation voltage drop, high current density and low production cost. A bipolar transistor is an electronic component that uses two types of carriers (Carries), electrons and holes (holes), to conduct current. The structure of a bipolar transistor is a three-terminal ( Three Terminal) components. The three terminals are Emitter, Base and Collector. [0003] Figure 1a ~ Figure 1c It is a structural schematic diagram of the formation process of the bipolar transistor in the prior art, such as Figure 1a ~ Figure 1c As shown, the step of forming a bipolar transistor in the prior art...

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Problems solved by technology

Moreover, the dense doping required by the extrinsic base region in the above process is difficult to easily achieve self-alignment with the emitter junction, which will easily cause both sides of the emitter junction to be highly doped, thereby increasing tunnel leakage.

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