Forming method of nitrogen-doped silicon carbide thin film

Abstract

The invention relates to a forming method of a nitrogen-doped silicon carbide thin film, comprising the following steps of: providing a semiconductor substrate; and forming the nitrogen-doped silicon carbide thin film on the semiconductor substrate, wherein reaction gas used for forming the nitrogen-doped silicon carbide thin film comprises tetramethylsilane, ammonia gas and nitrogen gas. The nitrogen-doped silicon carbide thin film formed with the forming method of the invention has the advantages of small ranges of reflectivity difference values and good uniformity in properties.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a nitrogen-doped silicon carbide film. Background technique [0002] In VLSI technology, silicon dioxide, which has thermal stability and moisture resistance, has always been the main dielectric material used between metal interconnection lines, and metal aluminum is the main material for circuit interconnection wires in chips. However, relative to the miniaturization of components and the increase in integration, the number of conductor connections in the circuit continues to increase, making the parasitic effects of resistance (R) and capacitance (C) in the conductor connection structure, causing serious problems. Transmission delay (RC Delay), in 130nm and more advanced technologies, becomes the main factor that limits the signal transmission speed in the circuit. [0003] Therefore, in terms of reducing wire resistance, metal copper has been wi...

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Problems solved by technology

[0005] Low dielectric constant materials are usually relatively loose and have poor adhesion to lead copper. In the prior art, a protective layer is usually formed between the lead copper and the low dielectric constant film, and the protective layer is usually formed by chemical vapor phase Formed by a deposition process, the protective layer is usually made of nitrogen-doped silicon carbide, which is a material with good adhesion to copper wires and low dielectric constant films, but now different batches of nitrogen-doped silicon carbide films The properties of the film are very different, especially the reflectivity is very different, which makes the interconnect structure of nitrogen-doped silicon carbide unstable.

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