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Topological insulator material and preparation method thereof

A technology of topological insulator and deposition method, applied in insulators, inorganic insulators, electrolytic inorganic material coating and other directions, can solve problems such as unreported, and achieve the effect of low cost and simple process

Inactive Publication Date: 2011-05-18
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the superlattice structures synthesized by current electrochemical methods (mainly template-assisted electrochemical deposition V-VI superlattice nanowire arrays) can only realize the radial dimension of the material (along the direction of nanowire growth). Regulation, the regulation of the axial size of different fragments (perpendicular to the nanowire growth direction), and even the selective preparation of a certain fragment have not been reported.

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  • Topological insulator material and preparation method thereof
  • Topological insulator material and preparation method thereof
  • Topological insulator material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Example 1. Preparation of Single Crystal Antimony Telluride / Turium Segmented Nanowire Arrays

[0029] A 50nm-thick gold film on the back, an alumina template with a length and width of about 1 cm, and a thickness of 30 microns was used as the working electrode, the platinum sheet was used as the counter electrode, and the saturated calomel electrode was used as the reference electrode. The concentrations were 0.005mol / The mixed solution of L and 0.015mol / L antimony trioxide and tellurium dioxide nitric acid (1mol / L) and tartaric acid (0.8mol / L) and water is the electrolyte, and the deposition is carried out under the conditions of two different deposition behaviors. Antimony telluride or tellurium, the voltages of the two stages are -0.35V and -0.70V respectively, T 1 :T 2 =3:1, where T 1 Consists of 6 voltage pulses. The electrolyte should be stirred at a constant speed during the 3-hour deposition process. After the electrochemical deposition is finished, a layer...

Embodiment 2

[0030] Example 2. Preparation of single crystal antimony telluride / tellurium segmented nanowire arrays

[0031] A 50nm-thick gold film on the back, an alumina template with a length and width of about 1 cm, and a thickness of 30 microns was used as the working electrode, the platinum sheet was used as the counter electrode, and the saturated calomel electrode was used as the reference electrode. The concentrations were 0.005mol / The mixed solution of L and 0.015mol / L antimony trioxide and tellurium dioxide nitric acid (1mol / L) and tartaric acid (0.8mol / L) and water is the electrolyte, and the deposition is carried out under the conditions of two different deposition behaviors. Antimony telluride or tellurium, the voltages of the two stages are -0.20V and -0.35V respectively, T 1 :T 2 =4:1, where T 1 Consists of 3 voltage pulses. The electrolyte should be stirred at a constant speed during the 3-hour deposition process. After the electrochemical deposition is finished, a la...

Embodiment 3

[0032] Example 3, preparation of single crystal tellurium nanodiscs

[0033] A 50nm-thick gold film on the back, an alumina template with a length and width of about 1 cm, and a thickness of 30 microns was used as the working electrode, the platinum sheet was used as the counter electrode, and the saturated calomel electrode was used as the reference electrode. The concentrations were 0.005mol / The mixed solution of L and 0.015mol / L antimony trioxide and tellurium dioxide nitric acid (1mol / L) and tartaric acid (0.8mol / L) and water is the electrolyte, and the deposition is carried out under the conditions of two different deposition behaviors. Antimony telluride or tellurium, the voltages of the two stages are -0.20V and -0.70V respectively, T 1 :T 2 =1:1, where T 1 Consists of 2 voltage pulses. The electrolyte should be stirred at a constant speed during the 3-hour deposition process. After the electrochemical deposition, the interior of the aluminum oxide template was uni...

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Abstract

The invention provides a topological insulator material and a preparation method thereof, and belongs to the field of preparation of novel materials. The topological insulator material is an antimonytelluride / tellurium segmented nanowire array or a tellurium nano disc array. The regular antimonytelluride / tellurium segmented nanowire array or the tellurium nano disc array is directly obtained on the template by a template assisted method; and the prepared nano material is used for regulating and controlling the topological insulation performance of the material. Compared with the traditional method for preparing bismuth selenide materials, the preparation method of the topological insulator material has the characteristics of simplicity, low cost, one-step molding and the like.

Description

technical field [0001] The invention belongs to the field of preparation of nanometer materials, and in particular relates to an insulator material and a preparation method thereof. Background technique [0002] According to the different electronic state structures, materials in the traditional sense are divided into two categories: "metals" and "insulators". The topological insulator is a new quantum state of matter. The bulk electron state of this matter state is an insulator with an energy gap, while its surface is a metal state without an energy gap. Different from surface states caused by surface unsaturated bonds or surface reconstruction in the general sense, the surface metal state of topological insulators is completely determined by the topology of the bulk electronic state of the material, which is protected by symmetry, so it is basically not affected by Effects of impurities and disorder. It is precisely because of these important characteristics that topolog...

Claims

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Application Information

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IPC IPC(8): H01B3/02H01B19/00C25D9/04C25D5/18B82Y30/00B82Y40/00
Inventor 吴凯黄斌陈晨
Owner PEKING UNIV
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