Plasma processing equipment and method

Abstract

The invention provides plasma processing equipment, which comprises a process chamber, an upper electrode, a lower electrode and a grid mesh, wherein the upper electrode and the lower electrode are arranged in the process chamber; the grid mesh is arranged between the upper electrode and the lower electrode and connected with a pulse voltage or an alternating current voltage; and the parameter of the pulse voltage or the alternating current voltage can be adjusted so as to change a plasma parameter. The invention also provides a plasma processing method. In the plasma processing equipment and the plasma processing method, the plasma parameter can be adjusted effectively, the adjustment range of the plasma parameter is enlarged and particle pollution is reduced.

Description

technical field [0001] The present invention relates to the field of plasma technology, and in particular, to a plasma processing device and method. Background technique [0002] With the continuous advancement of science and technology, plasma processing / processing technology has gradually matured, and has been widely used in the manufacturing process of high-tech products such as semiconductors, solar cells, and TFT panels, and the competition among manufacturers has become increasingly fierce. In order to meet the new requirements put forward by enterprises for product quality and production efficiency, the vast number of scientific researchers must constantly make new improvements and perfections to the technology and equipment in this technical field. [0003] Currently, commonly used plasma processing technologies include plasma etching, physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) and plasma enhanced chemical vapor deposition (...

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Problems solved by technology

Therefore, it is difficult for the plasma in the upper region 7 to reach the lower region 9 through the grid 8, which causes a relative decrease in the plasma density above the lower electrode 4, thereby affecting the process rate, especially seriously reducing the reaction rate during film deposition.

[0010] For the situation that the grid 8 is suspended (here, the suspension refers to utilizing some insulating materials such as ceramics to fix the grid 8 in the chamber so that it remains electrically isolated from the inner wall of the chamber), due to the The reason why the electron mobility is greater than the ion mobility is that the surface area of ​​the grid 8 will accumulate a large number of electrons and form an ion sheath, and due to the electric field of the sheath, the energy of the electrons diffused to the vicinity of the grid 8 is lower than that generated by the plasma electron energy in the region, leading to a reduced probability of chemical reactions with higher threshold energies in the plasma and ultimately affecting process results

[0011] When grid 8 is connected with DC positive bias, it is in positive potential and offsets ion sheath potential to form electron sheath, and the electrons diffused to the vicinity of grid 8 obtain energy from the sheath electric field and are accelerated, therefore, the electrons in the plasma The increase of high-energy electrons will further increase the probability of chemical reactions with higher threshold energy, and the result will also affect the process results, such as changing the film composition in the PECVD process, etc.

[0012]When the grid 8 is connected to a DC negative bias, it is at a negative potential and further promotes the negative sheath potential to increase, and the sheath thickness also increases accordingly , resulting in the strong repulsion of the electrons diffused to the vicinity of the grid 8, resulting in a decrease in the energy of the electrons near the grid 8, which in turn reduces the collision decomposition ability of the electrons and molecules and affects the plasma parameters

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