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Method for preparing transmission electron microscope sample of soft brittle phototransistor

A technology for transmission electron microscope samples and photoelectric crystals, which is applied in the preparation of test samples, etc., can solve the problems of broken, fractured, scratched, uncomfortable soft and brittle photoelectric crystal TEM preparation, and the ion thinning system cannot be eliminated, etc., to prevent fractures. , reduce the possibility, reduce the effect of thickness

Inactive Publication Date: 2011-04-20
DALIAN UNIV OF TECH
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Problems solved by technology

However, this traditional TEM preparation technology for hard and brittle materials is not suitable for TEM preparation of soft and brittle photoelectric crystals.
For example, in the rough grinding stage, the soft and brittle photoelectric crystal will be broken, broken, scratched, and have defects such as micro-deformation, while the abrasive paste or abrasive using free abrasives will embed the free abrasive on the surface of the soft and brittle photoelectric crystal, and the final ions The thinning system cannot remove these defects, or simply cannot enter the ion thinning system, and the soft and brittle photoelectric crystal is already broken

Method used

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Embodiment Construction

[0013] The specific implementation manner of the present invention will be described in detail below in conjunction with the technical solutions.

[0014] Selection of representative Hg of group II-VI soft and brittle photoelectric crystals 0.79 Cd 0.21Te(111) was used as the object of TEM sample preparation. The protective layer is made of Si(100), the thickness is about 625 microns, the roughness Ra of the ultra-smooth surface is 0.4nm, and the Ra of the other side is 496nm, which is a commercial 4-inch silicon wafer. Using a diamond pen, the silicon wafer and HgCdTe crystals are cut and grown into small strips with a width of about 8 mm and a width of about 2 mm. HgCdTe crystals are 600 microns thick. Choose 3 silicon wafer strips and 1 mercury cadmium telluride strip. Choose one side of HgCdTe as the surface for TEM observation, and use two silicon wafers for bonding. The 0.4nm side of the silicon wafer is bonded to the HgCdTe surface, and the 496nm side of the silicon...

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Abstract

The invention belongs to the technical field of the preparation of transmission electron microscope samples of soft brittle phototransistors, and relates to a method for preparing a transmission electron microscope sample of a soft brittle phototransistor, in particular to a method for preparing a transmission electron microscope sample of a soft brittle photo semiconducting transistor. The method is characterized in that a hard brittle semiconductor with micro Vickers hardness of over 8 GPa is used as a protective layer of the soft brittle phototransistor, wherein the roughness Ra of the ultra-smooth surface of the protective layer is below 1 nanometer, and the thickness is below 650 micrometers; sand paper of 120 to 800 meshes is adopted in the coarse grinding stage, and a membrane is ground by adopting diamond of between 0.1 and 30 micrometers in the accurate grinding stage; the protective layer is bonded with the sample by adopting a hot setting adhesive which is insoluble in an organic solvent, and a first surface of the ground transmission electron microscope sample is bonded with a substrate by adopting a hot setting adhesive which is soluble in the organic solvent; and in the final stage of accurate grinding, the transmission sample and a thin area of the protective layer are obtained by a stress-free grinding method. The method has the advantages that the preparation of the transmission electron microscope sample of the soft brittle phototransistor is realized, and high-resolution transmission electron microscope atomic images are obtained.

Description

technical field [0001] The invention belongs to the technical field of soft and brittle photoelectric crystal transmission electron microscope sample preparation, in particular to a method for preparing soft and brittle photoelectric semiconductor crystal transmission electron microscope samples. Background technique [0002] With the rapid development of high and new technologies such as infrared, optoelectronics, aviation, and aerospace, the emerging II-VI group soft and brittle optoelectronic devices have higher and higher requirements for the surface quality and integrity of HgCdTe. Abrasive grinding and mechanical polishing are done. This traditional processing method applied to hard and brittle materials is very easy to cause defects such as fracture, fragmentation, scratches, embedding, and deformation of HgCdTe crystals. Therefore, for this emerging soft and brittle photoelectric crystal, nanofabrication technology must be used to avoid the defects caused by traditio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28
Inventor 张振宇周红秀霍凤伟赵东杰
Owner DALIAN UNIV OF TECH
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