Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

GaN nanowire array carrying functional groups and making method and application thereof

A technology of nanowire arrays and functional groups, applied in the field of GaN nanowire arrays

Inactive Publication Date: 2013-01-02
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conductivity of water is greatly affected by the environment and cannot truly reflect the identification of biomolecules. Engineers and technicians hope to collect information transmitted from organic molecular membranes.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GaN nanowire array carrying functional groups and making method and application thereof
  • GaN nanowire array carrying functional groups and making method and application thereof
  • GaN nanowire array carrying functional groups and making method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] in accordance with figure 1 Plan and cross-sectional SEM pictures showing GaN nanowire arrays (USA, NIST). It can be seen from the figure that the diameter of a single GaN nanowire is between 50-500nm, the height is between 9-10μm, the spacing of the nanowire array is between 200nm-20μm, and all GaN nanowires show a flat surface. In an upright position against the support base.

Embodiment 2

[0044] Place the GaN nanowire array in a solution of sulfuric acid:hydrogen peroxide (3:1 (v / v)) at 80°C and incubate for 4 hours, then use ultrasound to peel off the GaN nanowires from the growth substrate, and disperse the stripped GaN nanowires. in CCl 2 h 2 In the solution, use a pipette to disperse the solution on a dry KBr crystal sheet, place the sample in an oven at 80° C. for 4 hours, and analyze the sample by infrared spectroscopy. Infrared spectrum such as image 3 , at 3400, 1600cm -1 Infrared absorption of -OH appears in the region. Of which 3168cm -1 The absorption peak corresponds to OH, which can be used to graft organic molecular films. Similarly, the GaN nanowire array was placed in a solution of sulfuric acid / nitric acid (1:1), incubated at 80°C for 8 hours, separated, and infrared spectroscopy was performed at 3400, 1600cm -1 Infrared absorption of -OH appears in the region. Its 3168cm -1 The absorption peak corresponds to OH and can be used to graf...

Embodiment 3

[0046] use figure 2 The designed route synthesizes carboxylated trithiophene (TP-COOH). Under an argon atmosphere, under the cooling of a dry ice / acetone mixture at -78°C, take 16mMol of butyllithium and 16mmol of isopropylamine and add dropwise to 50mL of tetrahydrofuran solution containing TP, stir for 1 hour, and add a little excess Dry ice, and continue stirring for 2 hours. Stirring of the reaction was continued overnight after the addition of dry ice was discontinued. The red precipitate by suction filtration is carboxylated trithiophene. Dissolve in 0.1M NaOH solution, filter, add acid until excessive red precipitate occurs, and filter with suction to obtain pure carboxylated trithiophene. Do infrared analysis, infrared spectrum see Figure 4 b. at 1649cm -1 There is a strong absorption peak of carboxylic acid. The carboxylation of hexathiophene is the same as that of trithiophene, the difference is that the amount of THF solvent required is more, and its infrar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Heightaaaaaaaaaa
Login to View More

Abstract

The invention relates to a GaN nanowire array carrying functional groups, which is characterized in that an upright GaN nanowire array is used as a substrate, and the surfaces of nanowires generate Ga-OH functional groups through chemical oxidation or plasma oxidation; or SiO2, TiO2 or Al2O3 films are deposited on the surfaces of nanowires with an atomic-layer deposition method, and the surfaces have -OH functional groups through hydrolysis; the -OH functional groups react with trimethyl thiophene to obtain the GaN nanowire array carrying functional groups, wherein one end of the trimethyl thiophene has N- hydroxyl amber imide ester groups, and the other end is dicarboxylic carbonyl chlorides. The GaN nanowire array carrying functional groups can be applied to biological molecule separating and real-time detection, biological molecule matrix auxiliary laser disintegrating flight time mass spectra detection, detection for two electrode systems of biological molecules FET and detection for three electrode systems of biological molecules FET. The invention discloses a making method of the GaN nanowire array carrying functional groups.

Description

Technical field: [0001] The invention relates to a GaN nanowire array, specifically, a GaN nanowire array with functional groups on the surface of the GaN nanowire, its preparation method and application. Background technique [0002] Gallium nitride (GaN) nanowires, like zinc oxide (ZnO), silicon nanowires (Si), and carbon nanotubes (CNTs), are an important one-dimensional semiconductor material. In gallium nitride crystals, strong covalent bonds are formed between gallium and nitrogen elements, allowing them to exhibit mechanical properties comparable to carbon nanotubes. GaN nanowires have relatively stable physical and chemical properties. They can withstand the erosion of acids, alkalis, and organic solvents. They have a high degree of thermal stability and can withstand high temperatures of 900°C. The existing technology has been able to proficiently prepare nanowires with a diameter of 5-500nm and a length of millimeter order. [0003] GaN is a wide-bandgap semicond...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/40C30B33/00G01N27/64G01N27/327G01N21/35B82Y15/00B82Y40/00
Inventor 陈亚清郭东杰
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com