IEEE1500 standard based IP nuclear measuring transmission component and control method thereof
A transmission component and standard technology, applied in the field of IP core testing transmission components and their control, can solve the problems of extra area overhead and increased functional path delay, and achieve the effect of less area overhead, reduced delay, and increased operating frequency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach 1
[0011] Specific implementation mode one: combine image 3 Describe this embodiment, this embodiment includes a complementary metal oxide semiconductor transmission component, the complementary metal oxide semiconductor transmission component is composed of a first MOS tube part 1 and a second MOS tube part 2; the first MOS tube part 1 and the second MOS tube part Two MOS tube parts 2 are connected in parallel, the source of the first MOS tube part 1 is connected to the source of the second MOS tube part 2, the drain of the first MOS tube part 1 is connected to the drain of the second MOS tube part 2, The source of the first MOS transistor part 1 is the data signal input end of the complementary metal oxide semiconductor transmission component, and the drain of the first MOS transistor part 1 is the data signal output terminal of the complementary metal oxide semiconductor transmission component; the first The grid of the MOS transistor part 1 is connected to the first control ...
specific Embodiment approach 2
[0012] Specific implementation mode two: combination Figure 4 , Image 6 Describe this embodiment, the difference between this embodiment and the specific embodiment is that it also increases the pull-up control part 3; the pull-up control part 3 is a PMOS transistor, and the source of the pull-up control part 3 is connected with the first The source of the MOS transistor part 1 is connected to the source of the second MOS transistor part 2, the drain of the pull-up control part 3 is connected to the power supply VDD, and the gate of the pull-up control part 3 is connected with the third control signal / CS through a NOT gate connected. Other compositions and connection methods are the same as those in Embodiment 1.
specific Embodiment approach 3
[0013] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the first MOS tube component 1 adopts a P-channel enhanced MOS transistor, and the second MOS tube component 2 adopts an N-channel enhanced MOS tube. Other compositions and connection modes are the same as those in Embodiment 1 or 2.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com