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Manufacture method of bi-distributed feedback laser double-amplifier based on gamma waveguide

A manufacturing method and double-distribution technology, applied in the direction of semiconductor lasers, semiconductor laser devices, lasers, etc., can solve problems such as the inability to take into account the depth of signal modulation and the reduction of signal tuning range

Inactive Publication Date: 2011-01-05
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, while obtaining a wide range of tunable self-pulsation beat frequency by directly modulating the injection current of the DFB laser, the multi-segment self-pulsation laser cannot take into account the signal modulation depth, which greatly reduces the usable signal tuning range.

Method used

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  • Manufacture method of bi-distributed feedback laser double-amplifier based on gamma waveguide
  • Manufacture method of bi-distributed feedback laser double-amplifier based on gamma waveguide
  • Manufacture method of bi-distributed feedback laser double-amplifier based on gamma waveguide

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Embodiment

[0037] please refer again figure 1 , figure 2 , image 3 with Figure 4 A kind of manufacturing method based on Y waveguide double distributed feedback laser+double amplifier provided by the present invention, comprises following manufacturing steps:

[0038] Step 1: Select an N-type indium phosphide substrate 10;

[0039] Step 2: On the N-type indium phosphide substrate 10, sequentially epitaxially fabricate an InP buffer layer 11 of 1.5 μm, a lower waveguide layer 12 of 100 nm, a multi-quantum well active region 13, an upper waveguide layer 14 of 100 nm and a grating layer 15, Forming a material structure; wherein the multi-quantum well active region 13 is an InGaAsP material, the bandgap wavelength of the material is 1.55 μm, the number of quantum wells is 6, and the total thickness is 90 nanometers;

[0040] Step 3: Fabricate the passive waveguide region 3 on one side of the material structure, and the active waveguide region 2 on the other side; when making the passi...

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Abstract

The invention discloses a manufacture method of a bi-distributed feedback laser double-amplifier based on gamma waveguide, comprising the steps of manufacturing an InP buffer layer, a lower waveguide layer, a multiple quantum well active area, an upper waveguide layer and a grating layer on an N-type indium phosphide substrate in extension and in sequence; manufacturing a passive waveguide area and an active waveguide area on the other side; manufacturing a grating; manufacturing a grating cover layer, a light limitation layer and an electric contact layer on the active waveguide area and on the passive waveguide area in extension and in sequence; etching a gamma-type ridge waveguide downward on the electric contact layer; growing a silicon dioxide insulation layer on the top of the grating and on the surface of the gamma-type ridge waveguide; etching the silicon dioxide insulation layer on the surface of the gamma-type ridge waveguide; manufacturing a first electric isolation groove between the two arms of the gamma-type ridge waveguide on the active waveguide area, and manufacturing a second electric isolation groove between the DFB area and the SOA area on the active waveguide area; manufacturing P electrodes on the two sides of the first electric isolation groove and on the two sides of the second electric isolation groove; reducing the thickness of the N-type indium phosphide substrate; and manufacturing an N-side electrode below the N-type indium phosphide substrate after reducing the thickness to complete the manufacture of the amplifier.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a method for manufacturing a Y-waveguide-based double-distributed feedback laser + a double amplifier. Background technique [0002] The basic components of a multi-segment self-pulsating laser are two distributed feedback lasers, which are tuned by current or using gratings with different Bragg wavelengths. The emission wavelengths of the two lasers have a shift of about several nanometers. When the laser light emitted by the self-pulsation laser is irradiated on the detector, a self-pulsation signal with a frequency equal to the difference between the emission frequencies of the two distributed feedback lasers will be generated. Compared with other forms of laser-based clock recovery devices, multi-segment self-pulsating lasers have the advantage of compact structure, and at the same time, their self-pulsation frequency can be flexibly adjusted in a wide range by injection...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01S5/068H01S5/042H01S5/40
Inventor 孔端花朱洪亮梁松
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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