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Light-emitting diode with light filtering film and manufacturing method thereof

A technology of light emitting diodes and filter films, applied in the optical field, can solve the problems of serious light decay, shorten the development time of epitaxy, etc., and achieve the effect of reducing light decay and good production compatibility

Inactive Publication Date: 2011-01-05
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a light-emitting diode with a filter film, which solves the serious problem of light attenuation in the existing LED packaging structure, and adds a layer of long-wave pass filter film on the surface of the LED chip to simplify the structural design of the epitaxy and shorten the development time of the epitaxial

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  • Light-emitting diode with light filtering film and manufacturing method thereof
  • Light-emitting diode with light filtering film and manufacturing method thereof

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Embodiment Construction

[0015] In the following, the present invention will be described in detail with reference to the accompanying drawings and embodiments.

[0016] Compared with traditional LED chips, the manufacturing process of the LED chip with filter film of the present invention adds processes such as a filter film, and the chip manufacturing process is now described.

[0017] Step 1: Etching part of the epitaxial layer on the GaN epitaxial layer, including the P-type GaN layer 106, the light-emitting layer multi-quantum well structure MQW 105, etch to the N-type GaN layer 102;

[0018] Step 2: depositing a transparent conductive layer 107 on the P-type gallium nitride layer 106 of the light emitting diode;

[0019] Step 3: deposit metals 104 and 108 on the P and N electrodes of the LEDs respectively;

[0020] Step 4: growing the filter film layer 103 in areas other than the P and N electrodes of the light-emitting diodes by electron beam evaporation or ion beam sputtering coating system; ...

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Abstract

The invention discloses a light-emitting diode with a light filtering film. A gallium-nitride-based light-emitting diode is used for processing P and N electrodes in a normal process, an electron beam evaporation or ion beam sputtering coating system is used for growing a wavelength pass filtering film layer outside P and N electrode areas of the light-emitting diode, and the wavelength pass filtering film layer has a stopping function for short-wavelength light, such as ultraviolet light, and the like and high transmissivity for long-wavelength light. Because short-wavelength light can accelerate the ageing of an LED (Light-Emitting Diode) packaging material, when being packaged, an LED chip with a long wavelength pass filtering film layer structure effectively reduces light decay of the LED, ensures reliability, consistency and service life of the LED, simplifies extended structure design and shortens extended research and development time at the same time.

Description

technical field [0001] The invention relates to the field of optics, in particular to a light-emitting diode with a filter film and a manufacturing method thereof. Background technique [0002] Semiconductor light-emitting diode (LED: Light Emitting Diode) converts electrical energy into light energy, which is characterized by low energy consumption, long life, rich colors, and environmentally friendly manufacturing process. White LEDs are considered to be the fourth-generation lighting power source to replace fluorescent lamps and incandescent lamps. [0003] A traditional way to form a white LED is to mix colors to form white light by exciting a yellow phosphor covering the chip with blue light. Conventional white LED Lamp packaging structure, for low-power white LEDs, the LED chip is fixed in the reflective cup of the bracket, and the bottom of the reflective cup is coated with silver glue or epoxy resin, which can adhere and fix the chip, and coated on the blue LED chip...

Claims

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Application Information

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IPC IPC(8): H01L33/44
Inventor 张建宝郑如定
Owner HC SEMITEK CORP
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