Cross-scale biomimetic micro-nano branch structure array and preparation method thereof
A branched structure, micro-nano technology, applied in the fields of micro-nano materials and robotics, can solve the problems of not achieving the adjustable parameters of the micro-nano structure, difficulty in ordering structure, and inability to meet the requirements of use.
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Embodiment 1
[0024] (1) The high-purity aluminum sheet is ultrasonically cleaned in acetone and ethanol in sequence to remove oil stains on the surface of the aluminum sheet.
[0025] (2) After drying the decontaminated high-purity aluminum flakes, 2 Or placed in a tube furnace in an inert atmosphere, and annealed at 500 ° C for 4 hours.
[0026] (3) The aluminum sheet after annealing is carried out electrochemical polishing in the mixed solution (ethanol:perchloric acid=9:1 volume ratio) of absolute ethanol and perchloric acid, with graphite as negative electrode, voltage is 20V, eliminates aluminum Scratches and oxide layers on the chip surface.
[0027] (4) Obtain a photoresist mask pattern on the surface of the aluminum sheet by ultraviolet lithography.
[0028] (5) Carry out argon ion beam etching on the aluminum sheet with a photoresist mask, the ion energy is 500eV, the ion beam is vertically incident, and the beam current density is 0.5mA / cm 2 , working pressure 2×10 -2 Pa, an ...
Embodiment 2
[0036] (1) The high-purity aluminum sheet is ultrasonically cleaned in acetone and ethanol in sequence to remove oil stains on the surface of the aluminum sheet.
[0037] (2) After drying the high-purity aluminum flakes after degreasing, in N 2 Or placed in a tube furnace in an inert atmosphere, and annealed at 500 ° C for 4 hours.
[0038] (3) The aluminum sheet after annealing is carried out electrochemical polishing in the mixed solution (ethanol:perchloric acid=9:1 volume ratio) of absolute ethanol and perchloric acid, with graphite as negative electrode, voltage is 20V, eliminates aluminum Scratches and oxide layers on the chip surface.
[0039] (4) Obtain a photoresist mask pattern on the surface of the aluminum sheet by ultraviolet lithography.
[0040] (5) Argon ion beam etching is carried out on the aluminum sheet with a photoresist mask, the ion energy is 600V, the ion beam incident angle is 30°, and the beam current density is 0.6mA / cm 2 , working pressure 2×10 ...
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